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Erschienen in:
Introduction Kapitel lesen Erstes Kapitel lesen

2012 | OriginalPaper | Buchkapitel

2. Physical and Mathematical Fundamentals

verfasst von : Bernd Lemaitre, Christoph Sohrmann, Lutz Muche, Joachim Haase

Erschienen in: Process Variations and Probabilistic Integrated Circuit Design

Verlag: Springer New York

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Abstract

This chapter provides a short overview on the basics of CMOS transistor modeling with respect to deep submicron requirements and mathematical approaches to analyze variations in the design process. Technical terms are going to be defined and explained; physical processes and mathematical theories will be illustrated.

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Vorheriges Kapitel Introduction
Nächstes Kapitel Examination of Process Parameter Variations
Fußnoten
1
Whether the symbol y refers to the value or to the function should be evident from the context.
 
2
\(\frac{1} {{\sigma }^{2}} \sim {\Sigma }^{-1}\) and erf\(\left ( \frac{c} {\sqrt{2}}\right ) = \mathcal{P}\left (\frac{1} {2}, \frac{{c}^{2}} {2} \right ).\)
 
3
PCA can be applied in the same manner.
 
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Metadaten
Titel
Physical and Mathematical Fundamentals
verfasst von
Bernd Lemaitre
Christoph Sohrmann
Lutz Muche
Joachim Haase
Copyright-Jahr
2012
Verlag
Springer New York
Buch
Process Variations and Probabilistic Integrated Circuit Design

Print ISBN: 978-1-4419-6620-9

Electronic ISBN: 978-1-4419-6621-6

Copyright-Jahr: 2012

DOI
https://doi.org/10.1007/978-1-4419-6621-6_2

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