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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 10/2013

01.10.2013

Preparation and electrical transport properties of In filled and Te-doped CoSb3 skutterudite

verfasst von: Z. Qin, K. F. Cai, S. Chen, Y. Du

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2013

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Abstract

Nanopowders with nominal compositions of Co4Sb11.5Te0.5 and In0.5Co4Sb11.5Te0.5 were prepared via hydrothermal synthesis at 180 °C for 48 h, then heat treated and finally hot pressed at 625 °C and 80 MPa for 1 h in vacuum to form bulk samples. The phase compositions of the samples were determined by X-ray diffraction. Hall Effect measurement of the samples was carried out at room temperature. The fracture surface of the samples was observed by field emission scanning electron microscopy. The electrical conductivity and the Seebeck coefficient of the samples were measured from room temperature to around 748 K. The In-filled and Te-doped CoSb3 sample with longer time annealing before hot pressing had much better electrical transport properties with the highest power factor of 38.4 μWcm−1 K−2 around 573 K.
Vorheriger Artikel Optoelectronic operation in ferroic [NH2(C2H5)2]2CuxCo1−xCl4 nanocomposites
Nächster Artikel Effect of annealing time in the low-temperature growth of BFO thin films spin coated on glass substrates

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Metadaten
Titel
Preparation and electrical transport properties of In filled and Te-doped CoSb3 skutterudite
verfasst von
Z. Qin
K. F. Cai
S. Chen
Y. Du
Publikationsdatum
01.10.2013
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 10/2013
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1373-1

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