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Erschienen in:
Engineered Substrates for Advanced CMOS Technology Nodes and More-Than-Moore Applications Kapitel lesen Erstes Kapitel lesen

2014 | OriginalPaper | Buchkapitel

Rare Earth Implanted MOS Structures: Advantages and Drawbacks for Optoelectronic Applications

verfasst von : Lars Rebohle

Erschienen in: Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

Verlag: Springer International Publishing

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Abstract

In this paper the advantages and drawbacks of rare earth-implanted MOS structures for optoelectronic applications are investigated. The discussion starts with a short overview of the electroluminescence properties and highlights the ambivalent role of hot electrons in these devises, namely the efficient excitation of rare earths ions and the efficient creation of defects. In addition, the defect shell model is addressed which explains the slight but continuous fading of the electroluminescence during device operation. Based on this, strategies for improving critical device parameters are discussed. The potential for voltage downscaling is not yet fully exploited but is generally limited by the extension of a dark zone in which the hot electrons do not yet have enough kinetic energy to excite rare earth ions. The most frequent strategies for enhancing the power efficiency comprise the increase of the excitation cross section by pumping via Si nanoclusters or via other rare earth ions. Finally, the discussion closes with the different possibilities to improve the operation lifetime, followed by a few remarks about potential applications.

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Vorheriges Kapitel Preparation, Luminescent Properties and Bioimaging Application of Quantum Dots Based on Si and SiC
Nächstes Kapitel Silicon and Germanium Junctionless Nanowire Transistors for Sensing and Digital Electronics Applications
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Metadaten
Titel
Rare Earth Implanted MOS Structures: Advantages and Drawbacks for Optoelectronic Applications
verfasst von
Lars Rebohle
Copyright-Jahr
2014
Buch
Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

Print ISBN: 978-3-319-08803-7

Electronic ISBN: 978-3-319-08804-4

Copyright-Jahr: 2014

DOI
https://doi.org/10.1007/978-3-319-08804-4_16

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