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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 22/2019

12.10.2019

Room temperature ferromagnetism in ball milled Cu-doped ZnO nanocrystallines: an experimental and first-principles DFT studies

verfasst von: O. M. Lemine, T. Almusidi, M. B. Kanoun, S. Goumri-Said, M. Alshammari, N. Abdel All, Ali Z. Alanzi, Fahad S. Alghamdi, A. Alyamani

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 22/2019

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Abstract

Experimental and theoretical studies on the room temperature ferromagnetism of ball milled Zn0.95Cu0.05O nanocrystalline, were reported. X-ray diffraction analysis reveals that the most dominant crystalline phase is hexagonal wurtzite with presence of weak peaks due to Cu and CuO. Rietveld analysis indicated that the crystallite size decreases with increasing milling time, while the strain enhanced with milling time. Magnetic measurements using SQUID expose remarkable room temperature ferromagnetic ordering for milled samples. The physical origin of the ferromagnetism order has been explained using a bound magnetic polaron model. Theoretical calculations based on First principles methods were employed to calculate the electronic structures and magnetic properties of Cu doping and zinc and oxygen vacancies behavior of Zn1−xCuxO. It was found that a Cu dopant leads to induce magnetism and exhibits an increasing of magnetic moment when Zn vacancy are introduced.
Vorheriger Artikel Ferroelectricity temperature characterizes of hardened KNN–CC lead-free piezoceramics
Nächster Artikel Enrichment of optical, magnetic and photocatalytic properties in PVP capped CdO/SnO2 nanocomposites synthesized by microwave irradiation method

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Metadaten
Titel
Room temperature ferromagnetism in ball milled Cu-doped ZnO nanocrystallines: an experimental and first-principles DFT studies
verfasst von
O. M. Lemine
T. Almusidi
M. B. Kanoun
S. Goumri-Said
M. Alshammari
N. Abdel All
Ali Z. Alanzi
Fahad S. Alghamdi
A. Alyamani
Publikationsdatum
12.10.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 22/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-02350-5

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