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Erschienen in:
The Atomic Force Microscopy for Nanoelectronics Kapitel lesen Erstes Kapitel lesen

2019 | OriginalPaper | Buchkapitel

12. Scanning Microwave Impedance Microscopy (sMIM) in Electronic and Quantum Materials

verfasst von : Kurt A. Rubin, Yongliang Yang, Oskar Amster, David A. Scrymgeour, Shashank Misra

Erschienen in: Electrical Atomic Force Microscopy for Nanoelectronics

Verlag: Springer International Publishing

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Abstract

Scanning Microwave Impedance Microscopy (sMIM) is a sensitive electrical measurement technique which can characterize local static and temporal variations of electrical permittivity, and conductivity of materials and devices as well as for failure analysis. It is being used to characterize dielectrics, semiconductors and their doping response, and metals. Measurements can be made at room temperature down to cryogenic temperatures where quantum effects become important. Leveraging near-field electrical interactions between a probe and the sample, sMIM can measure and image electrical properties and operation at the nanoscale to micron scale by incorporation into an atomic force microscope. sMIM is being applied to a wide range of industrial and scientific applications to improve fundamental and functional understanding and operational performance of advanced, exploratory and quantum electronic devices and materials and their fabrication.

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Vorheriges Kapitel Diamond Probes Technology
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Metadaten
Titel
Scanning Microwave Impedance Microscopy (sMIM) in Electronic and Quantum Materials
verfasst von
Kurt A. Rubin
Yongliang Yang
Oskar Amster
David A. Scrymgeour
Shashank Misra
Copyright-Jahr
2019
Buch
Electrical Atomic Force Microscopy for Nanoelectronics

Print ISBN: 978-3-030-15611-4

Electronic ISBN: 978-3-030-15612-1

Copyright-Jahr: 2019

DOI
https://doi.org/10.1007/978-3-030-15612-1_12