Ausgabe 2/2008
Inhalt (23 Artikel)
Phase composition of films in a Bi-S system and formation of Bi2S3 films with different substructures
G. M. Akhmedov
Role of background O and Cu impurities in the optics of ZnSe crystals in the context of the band anticrossing model
N. K. Morozova, D. A. Mideros, E. M. Gavrishchuk, V. G. Galstyan
Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy
O. V. Belova, V. N. Shabanov, A. P. Kasatkin, O. A. Kuznetsov, A. N. Yablonskiĭ, M. V. Kuznetsov, V. P. Kuznetsov, A. V. Kornaukhov, B. A. Andreev, Z. F. Krasil’nik
Bistable amphoteric centers in semiconductors
A. G. Nikitina, V. V. Zuev
Photosensitivity of Pb1 − x Sn x Te:In films in the region of intrinsic absorption
A. É. Klimov, V. N. Shumskiĭ
Optical properties of AgGa x In1 − x Se2 alloys
I. V. Bodnar’
Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities
M. M. Mezdrogina, V. V. Krivolapchuk, Yu. V. Kozhanova
Ionization of the sulfur-related DX Center in In 1 − x Ga x P in an electric field
Yu. K. Krutogolov
Stimulated radiation of optically pumped Cd x Hg1 − x Te-Based heterostructures at room temperature
A. A. Andronov, Yu. N. Nozdrin, A. V. Okomel’kov, A. A. Babenko, V. S. Varavin, D. G. Ikusov, R. N. Smirnov
Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures
G. A. Kachurin, S. G. Cherkova, V. A. Volodin, D. V. Marin, M. Deutschmann
Photoluminescence of localized excitons in InGan quantum dots
S. O. Usov, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, N. N. Ledentsov
Photoconductivity of thin a-Si:H films
A. G. Kazanskiĭ, O. G. Koshelev, A. Yu. Sazonov, A. A. Khomich
Optical studies of AlN/n-Si(100) films obtained by the method of high-frequency magnetron sputtering
N. S. Zayats, V. G. Boĭko, P. A. Gentsar, O. S. Litvin, V. P. Papusha, N. V. Sopinskiĭ
Study of the conductance of ultrathin tin diphthalocyanine films
N. L. Levshin, N. N. Pronin, P. A. Forsh, S. G. Yudin
Variation in optical-absorption edge in SiN x layers with silicon clusters
M. D. Efremov, V. A. Volodin, D. V. Marin, S. A. Arzhannikova, G. N. Kamaev, S. A. Kochubeĭ, A. A. Popov
Some aspects of selection of impurities improving photoelectric characteristics of chalcogenide vitreous semiconductors
I. I. Burdiyan, V. V. Cosiuc, R. A. Pynzar’
High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction
I. V. Grekhov, P. A. Ivanov, N. D. Il’inskaya, O. I. Kon’kov, A. S. Potapov, T. P. Samsonova
Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased
A. A. Frantsuzov, N. I. Boyarkina, V. P. Popov
Effect of Auger recombination on the thermal stability of high-voltage high-power semiconductor diodes
T. T. Mnatsakanov, M. E. Levinshteĭn, A. S. Freĭdlin
Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure
A. P. Astakhova, T. V. Bez”yazychnaya, L. I. Burov, A. S. Gorbatsevich, A. G. Ryabtsev, G. I. Ryabtsev, M. A. Shchemelev, Yu. P. Yakovlev
Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD
W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov
Diffusion of chromium into epitaxial gallium arsenide
M. D. Vilisova, E. P. Drugova, I. V. Ponomarev, V. A. Chubirko
Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4H modification
V. V. Kozlovskiĭ, V. V. Emtsev, K. V. Emtsev, N. B. Strokan, A. M. Ivanov, V. N. Lomasov, G. A. Oganesyan, A. A. Lebedev