Ausgabe 3/2004
Inhalt (25 Artikel)
Genesis of nanoscale defects and damage in GaAs subjected to multipulse quasi-static photostrains in micrometer-sized regions of semiconductor
S. V. Vintsents, A. V. Zaitseva, V. B. Zaitsev, G. S. Plotnikov
Effects of predoping and implantation conditions on diffusion of silicon in gallium arsenide subjected to electron-beam annealing
M. V. Ardyshev, V. M. Ardyshev, Yu. Yu. Kryuchkov
Simulation of the concentration dependence of boron diffusion in silicon
O. V. Aleksandrov
Chromium diffusion in gallium arsenide
S. S. Khludkov, O. B. Koretskaya, A. V. Tyazhev
Special features of Sb2 and Sb4 incorporation in MBE-grown AlGaAsSb alloys
A. N. Semenov, V. S. Sorokin, V. A. Solov’ev, B. Ya. Mel’tser, S. V. Ivanov
Determination of gallium concentration in germanium doped using neutron-induced nuclear transmutation from measurements of resistivity in the region of hopping conductivity
O. P. Ermolaev, T. Yu. Mikul’chik
Effect of uniform compression on photoluminescence spectra of GaAs layers heavily doped with beryllium
T. S. Shamirzaev, K. S. Zhuravlev, J. Bak-Misiuk, A. Misiuk, J. Z. Domagala, J. Adamczewska
Impedance of solid solutions based on gallium-doped lead telluride
B. A. Akimov, V. V. Pryadun, L. I. Ryabova, D. R. Khokhlov
Role of space charge in the resistance formation in a bipolar semiconductor sample
A. Konin
Magnetic investigations of Cd1−x ZnxTe (x=0.12, 0.21) wide-gap semiconductors
Yu. V. Shaldin, I. Warchulska, M. Kh. Rabadanov, V. K. Komar’
Transport phenomena in coarse-grain CdTe polycrystals
S. A. Kolosov, Yu. V. Klevkov, A. F. Plotnikov
A critical analysis of investigation of deep levels in high-resistivity CdS single crystals by photoelectric transient spectroscopy
A. P. Odrinskii
The role of alloying effects in the formation of electronic structure of unordered Group III nitride solid solutions
A. V. Voznyy, V. G. Deibuk
Optical properties of polycrystalline zinc selenide
A. N. Bryzgalov, V. V. Musatov, V. V. Buz’ko
Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ ions
V. S. Avrutin, Yu. A. Agafonov, A. F. Vyatkin, V. I. Zinenko, N. F. Izyumskaya, D. V. Irzhak, D. V. Roshchupkin, É. A. Steinman, V. I. Vdovin, T. G. Yugova
Native disorder potential at the surface of a heavily doped semiconductor
V. B. Bondarenko, V. V. Korablev, Yu. I. Ravich
Spectral line broadening in quantum wells due to the coulomb interaction of carriers
A. A. Afonenko
Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate
V. G. Dubrovskii, Yu. G. Musikhin, G. É. Cirlin, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, A. A. Tonkikh, N. V. Kryzhanovskaya, N. A. Bert, V. M. Ustinov
Quantum confined stark effect and electroabsorption in semiconductor spherical layers
V. A. Arutyunyan, K. S. Aramyan, G. Sh. Petrosyan
Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy
I. P. Soshnikov, N. V. Kryzhanovskaya, N. N. Ledentsov, A. Yu. Egorov, V. V. Mamutin, V. A. Odnoblyudov, V. M. Ustinov, O. M. Gorbenko, H. Kirmse, W. Neumann, D. Bimberg
Diffusion of chromium in thin hydrogenated amorphous silicon films
S. K. Persheyev, P. R. Drapacz, M. J. Rose, A. G. Fitzgerald
Temperature dependence of electroluminescence of Er ions in tunnel diodes based on (111)Si:(Er, O)
A. M. Emel’yanov, N. A. Sobolev
Blue-green radiation in GaAs-based quantum-well lasers
N. V. Baidus’, A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, V. Ya. Aleshkin
GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques
V. M. Andreev, V. P. Khvostikov, N. A. Kalyuzhnyi, S. S. Titkov, O. A. Khvostikova, M. Z. Shvarts
Internal optical loss in semiconductor lasers
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov