Ausgabe 1/2004
Inhalt (19 Artikel)
Theory of threshold characteristics of semiconductor quantum dot lasers
L. V. Asryan, R. A. Suris
The evolution of surface structures in p-CdTe crystals under pulsed laser irradiation
A. Baidullaeva, M. B. Bulakh, A. I. Vlasenko, A. V. Lomovtsev, P. E. Mozol’
Fermi level pinning and negative magnetoresistance in PbTe:(Mn, Cr)
A. V. Morozov, A. E. Kozhanov, A. I. Artamkin, E. I. Slyn’ko, V. E. Slyn’ko, W. D. Dobrovolski, T. Story, D. R. Khokhlov
Green luminescence band of zinc oxide films copper-doped by thermal diffusion
Ya. I. Alivov, M. V. Chukichev, V. A. Nikitenko
Transformation of luminescence centers in CVD ZnS films subjected to a high hydrostatic pressure
N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, É. V. Yashina, V. B. Ikonnikov
The influence of impurities on radiative recombination via EL2 centers in gallium arsenide single crystals
M. B. Litvinova
Structurally complex two-hole and two-electron slow traps with bikinetic properties in p-ZnTe and n-ZnS crystals
M. A. Rizakhanov, E. M. Zobov, M. M. Khamidov
Universal analytical approximation of the carrier mobility in semiconductors for a wide range of temperatures and doping densities
T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S. N. Yurkov
Effect of hydrogen on the electronic structure and properties of boron nitrides
S. E. Kul’kova, D. V. Chudinov, D. V. Khanin
Diffusion of zinc into InP with an unprotected surface
V. F. Andrievskii, E. V. Gushchinskaya, S. A. Malyshev
Donor compensation in the depletion layer of CdF2 crystals with a Schottky barrier
A. S. Shcheulin, A. K. Kupchikov, A. E. Angervaks, A. I. Ryskin
Formation of ohmic contacts on semi-insulating GaAs by laser deposition of In
V. Kazlauskienė, V. Kažukauskas, J. Miškinis, A. Petravičius, R. Pūras, S. Sakalauskas, J. Sinius, J. -V. Vaitkus, A. Žindulis
The investigation of structural perfection of CdxHg1−x Te/CdZnTe epitaxial layers by the Raman scattering method
A. I. Belogorokhov, I. A. Denisov, N. A. Smirnova, L. I. Belogorokhova
Electron transfer between semiconductor quantum dots via laser-induced resonance transitions
A. V. Tsukanov, L. A. Openov
Recombination statistics and kinetics in semiconductor nanostructures
A. V. Sachenko, Yu. V. Kryuchenko
Formation of nanocrystalline silicon films using high-dose H+ ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing
I. E. Tyschenko, V. P. Popov, A. B. Talochkin, A. K. Gutakovskii, K. S. Zhuravlev
The effect of a Au impurity on the photoluminescence of porous Si and photovoltage on porous-Si structures
E. F. Venger, S. I. Kirillova, I. M. Kizyak, É. G. Manoilov, V. E. Primachenko
Effect of a fullerene coating on the photoluminescence of porous silicon
O. M. Sreseli, D. N. Goryachev, L. V. Belyakov, S. P. Vul’, I. B. Zakharova, E. A. Alekseeva