Ausgabe 5/2003
Inhalt (19 Artikel)
Artificial GeSi substrates for heteroepitaxy: Achievements and problems
Yu. B. Bolkhovityanov, O. P. Pchelyakov, L. V. Sokolov, S. I. Chikichev
Propagation of nonequilibrium phonons in single-crystal ZnTe
T. I. Galkina, A. Yu. Klokov, A. I. Sharkov, Yu. V. Korostelin, V. V. Zaitsev
Magnetooptical oscillations in bismuth at T≥77 K
O. V. Kondakov, K. G. Ivanov
A local specific feature of variation in the spectrum of picosecond superluminescence upon adding excited carriers to a non-Fermi electron-hole plasma in GaAs
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, S. V. Stegantsov
Phonon-assisted exciton luminescence in GaN layers grown by MBE and chloride-hydride VPE
M. G. Tkachman, T. V. Shubina, V. N. Jmerik, S. V. Ivanov, P. S. Kop’ev, T. Paskova, B. Monemar
Electronic properties of irradiated semiconductors. A model of the fermi level pinning
V. N. Brudnyi, S. N. Grinyaev, N. G. Kolin
Relaxation of a defect subsystem in silicon irradiated with high-energy heavy ions
S. A. Smagulova, I. V. Antonova, E. P. Neustroev, V. A. Skuratov
Photosensitive structures based on CdGa2Se4 single crystals
A. A. Vaipolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, N. Fernelius
Structural and optical properties of InAs quantum dots in AlGaAs matrix
D. S. Sizov, Yu. B. Samsonenko, G. E. Tsyrlin, N. K. Polyakov, V. A. Egorov, A. A. Tonkikh, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil’ev, Yu. G. Musikhin, A. F. Tsatsul’nikov, V. M. Ustinov, N. N. Ledentsov
Model of multi-island single-electron arrays based on the Monte Carlo method
I. I. Abramov, S. A. Ignatenko, E. G. Novik
Dispersion of the relaxation time of quasi-two-dimensional electrons under conditions of ionized-impurity scattering in a superlattice with doped quantum wells
S. I. Borisenko
Electronic and optical properties of AlAs/AlxGa1−x As(110) superlattices
G. F. Karavaev, V. N. Chernyshov, R. M. Egunov
Photoluminescence study of AlGaAs/GaAs/AlGaAs double quantum wells separated by a thin AlAs layer
G. B. Galiev, M. V. Karachevtseva, V. G. Mokerov, V. A. Strakhov, G. N. Shkerdin, N. G. Yaremenko
Electron heating by a strong longitudinal electric field in quantum wells
L. E. Vorob’ev, S. N. Danilov, V. L. Zerova, D. A. Firsov
Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC
M. G. Mynbaeva, A. A. Lavrent’ev, N. I. Kuznetsov, A. N. Kuznetsov, K. D. Mynbaev, A. A. Lebedev
Quantum-chemical simulation of the influence of defects on the infrared spectrum and the electronic structure of a-Se
A. S. Zyubin, F. V. Grigor’ev, S. A. Dembovskii
Phase transformations initiated in thin layers of amorphous silicon by nanosecond excimer laser pulses
G. D. Ivlev, E. I. Gatskevich
Detection of hydrogen impurity in silicon radiation detectors
L. F. Makarenko, F. P. Korshunov, S. B. Lastovskii, N. I. Zamyatin