Semiconductors

Photoconductivity of pyrolytic CdS films alloyed with Cs

T. L. Maiorova, V. G. Kluyev, T. V. Samofalova

Effect of a high-energy proton-irradiation dose on the electron mobility in n-Si crystals

T. A. Pagava, N. I. Maisuradze, M. G. Beridze

Theoretical investigations of the g factors and the hyperfine structure constants of the Cr4+ and Mn5+ centrs in silicon

Zhi-Hong Zhang, Shao-Yi Wu, Pei Xu

Charge spectroscopy of SiO2 layers with embedded silicon nanocrystals modified by irradiation with high-energy ions

I. V. Antonova, S. A. Smagulova, E. P. Neustroev, V. A. Skuratov, J. Jedrzejewski, E. Savir, I. Balberg

Electronic states on silicon surface after deposition and annealing of SiO x films

N. A. Vlasenko, P. F. Oleksenko, Z. L. Denisova, N. V. Sopinskii, L. I. Veligura, E. G. Gule, O. S. Litvin, M. A. Mukhlyo

The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors

A. Konin

The effect of a magnetic field on electrical properties of surface-barrier Bi-Si-Al structures

B. V. Pavlyk, A. S. Hrypa, D. P. Slobodzyan, R. M. Lys, J. A. Shykoryak, R. I. Didyk

Electrical and gas-sensitive properties of nanostructured SnO2:ZrO2 semiconductor films

S. I. Rembeza, N. N. Kosheleva, E. S. Rembeza, T. V. Svistova, Yu. V. Shmatova, Gang Xu

Photosensitive structures based on CuIn5Te8 single crystals: Development and properties

I. V. Bodnar, V. Yu. Rud, Yu. V. Rud, E. I. Terukov, A. M. Kovalchuk

Study of dielectric processes in (As2Se3)1 − x Bi x amorphous films

R. A. Kastro, G. I. Grabko

Enhancement of photoluminescence and raman scattering in one-dimensional photonic crystals based on porous silicon

K. A. Gonchar, G. K. Musabek, T. I. Taurbayev, V. Yu. Timoshenko

On charge transfer in the adsorbed molecules-graphene monolayer-SiC substrate system

S. Yu. Davydov

Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation

A. A. Lebedev, N. V. Agrinskaya, S. P. Lebedev, M. G. Mynbaeva, V. N. Petrov, A. N. Smirnov, A. M. Strel’chuk, A. N. Titkov, D. V. Shamshur

Absolute negative conductivity of graphene with impurities in magnetic field

M. B. Belonenko, N. G. Lebedev, N. N. Yanyushkina, M. M. Shakirzyanov

Insulator band gap in graphane nanoribbons

L. A. Openov, A. I. Podlivaev

Current response of a TlBr detector to 137Cs γ-ray radiation

I. M. Gazizov, V. M. Zaletin, V. M. Kukushkin, V. S. Khrunov

Simultaneous TE1 and TE2 mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction

V. Ya. Aleshkin, T. S. Babushkina, A. A. Birykov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, S. M. Nekorkin

A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

Jung-Hui Tsai, Ching-Sung Lee, Wen-Shiung Lour, Yung-Chun Ma, Sheng-Shiun Ye

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

T. R. Lenka, A. K. Panda

Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures

R. A. Khabibullin, I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, D. S. Ponomarev, V. P. Gladkov, V. A. Kulbachinskii, A. N. Klochkov, N. A. Uzeeva

Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, Z. N. Sokolova, A. Y. Leshko, I. S. Tarasov

High-voltage (3.3 kV) 4H-SiC JBS diodes

P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya, O. I. Kon’kov, A. S. Potapov, T. P. Samsonova, O. U. Serebrennikova

Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova, A. Y. Leshko, I. S. Tarasov

Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions

A. M. Nadtochiy, S. A. Blokhin, A. Mutig, J. A. Lott, N. N. Ledentsov, L. Ya. Karachinskiy, M. V. Maximov, V. M. Ustinov, D. Bimber

Ion implantation of platinum from pulsed laser plasma for fabrication of a hydrogen detector based on an n-6H-SiC crystal

V. Yu. Fominskii, R. I. Romanov, A. G. Gnedovets, V. V. Zuev, M. V. Demin, V. V. Grigoriev

Fabrication of por-Si/SnO x nanocomposite layers for gas microsensors and nanosensors

V. V. Bolotov, P. M. Korusenko, S. N. Nesov, S. N. Povoroznyuk, V. E. Roslikov, E. A. Kurdyukova, Yu. A. Sten’kin, R. V. Shelyagin, E. V. Knyazev, V. E. Kan, I. V. Ponomareva

The influence of substrate temperature on the structural and optical properties of ZnS thin films

M. Ashraf, S. M. J. Akhtar, Z. Ali, A. Qayyum

Vadim Valentinovich Emtsev (On his 70th birthday)