Ausgabe 7/2010
Inhalt (23 Artikel)
Photoprocesses in a semiconducting carbon photocapacitor with a double electrical layer
F. O. Ivashchyshyn, I. I. Grygorchak, B. P. Bakhmatyuk
Physics with isotopically controlled semiconductors
E. E. Haller
Photoinduced current transient spectroscopy of high-resistivity layered GaSe crystals
A. P. Odrinsky
Optical properties of quaternary GaN x As y P1 − x − y semiconductor alloys
A. Yu. Egorov, N. V. Kryzhanovskaya, E. V. Pirogov, M. M. Pavlov
Dependence of photoluminescence spectra of epitaxial Pb1 − x Eu x Te (0 ≤ x ≤ 0.1) alloy layers on conditions of growth
D. A. Pashkeev, Yu. G. Selivanov, F. Felder, I. I. Zasavitskiy
Calculation of the charge-carrier mobility in diamond at low temperatures
A. S. Baturin, V. N. Gorelkin, V. R. Soloviev, I. V. Chernousov
Bistable low temperature (77 K) impurity breakdown in p-type 4H-SiC
P. A. Ivanov, A. S. Potapov, T. P. Samsonova
Features of conduction mechanisms in Si/oligo-β-naphthol/metal heterostructures
Sh. M. Hasannli, N. N. Mursakulov, U. F. Samedova, N. N. Abdulzade, B. A. Mamedov, R. K. Guseynov
Effect of rectification of current induced by an electromagnetic wave in graphene: A numerical simulation
D. V. Zavyalov, S. V. Kryuchkov, T. A. Tyul’kina
Evolution of exciton states near the percolation threshold in two-phase systems with II–VI semiconductor quantum dots
N. V. Bondar, M. S. Brodyn
Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix
O. I. Rumyantsev, P. N. Brunkov, E. V. Pirogov, A. Yu. Egorov
Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields
I. S. Vasil’evskii, G. B. Galiev, Yu. A. Matveev, E. A. Klimov, J. Požela, K. Požela, A. Sužiedėlis, Č. Paškevič, V. Jucienė
Varistor effect in polymer-semiconductor composites
M. K. Kerimov, M. A. Kurbanov, I. S. Sultanahmedova, I. A. Faradzhzade, F. N. Tatardar, H. S. Aliyev, F. F. Yahyaev, U. V. Yusifova
Numerical simulation of time-dependent geminate recombination in polymers
N. A. Korolev, V. R. Nikitenko, A. P. Tyutnev
Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures
A. Yu. Egorov, A. G. Gladyshev, E. V. Nikitina, D. V. Denisov, N. K. Polyakov, E. V. Pirogov, A. A. Gorbazevich
The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hÿtch, A. E. Nikolaev, A. M. Mintairov, Yan He, J. L. Merz
Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures
S. K. Lyubutin, S. N. Rukin, B. G. Slovikovsky, S. N. Tsyranov
Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy
A. S. Saidov, M. S. Saidov, Sh. N. Usmonov, U. P. Asatova
Influence of the method of synthesis on properties of cadmium telluride films synthesized in highly nonequilibrium conditions
A. P. Belyaev, V. P. Rubets, V. V. Antipov, E. O. Eremina
Structural and optical properties of InAlN/GaN distributed Bragg reflectors
S. O. Usov, E. E. Zavarin, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Sakharov, A. E. Nikolaev, M. A. Sinitsyn, N. V. Kryzhanovskaya, S. I. Troshkov, N. N. Ledentsov
Fabrication of one-dimensional photonic crystals by photoelectrochemical etching of silicon
Yu. A. Zharova, G. V. Fedulova, E. V. Gushchina, A. V. Ankudinov, E. V. Astrova, V. A. Ermakov, T. S. Perova
MBE growth and characterization of 5-μm quantum-cascade lasers
V. V. Mamutin, V. M. Ustinov, J. Boetthcher, H. Kuenzel
The problem of uniformity of properties of 4H-SiC CVD films
A. M. Ivanov, N. B. Strokan, N. A. Scherbov, A. A. Lebedev