Semiconductors

Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs

V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Threshold of inelastic strain formation in Si and GaAs surface layers under multiple pulsed laser irradiation

S. V. Vintsents, A. V. Zoteev, G. S. Plotnikov

Dissociation energies of a CiCs complex and the A center in silicon

N. I. Boyarkina, S. A. Smagulova, A. A. Artem’ev

Initial stages of growth of diamond island films on crystalline silicon

N. A. Feoktistov, V. V. Afanas’ev, V. G. Golubev, S. A. Grudinkin, S. A. Kukushkin, V. G. Melekhin

Local structure of zinc impurity centers in lead chalcogenides and Pb1−x SnxTe solid solutions

S. A. Nemov, N. P. Seregin

Influence of tellurium impurity on the Properties of Ga1−X InXAsYSb1−Y (X>0.22) solid solutions

T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, Yu. P. Yakovlev

Optical properties of bulk and epitaxial unordered GaxIn1−x P semiconductor alloys

Ya. I. Vyklyuk, V. G. Deibuk, S. V. Zolotarev

Electrical and thermoelectric properties of p-Ag2Te

F. F. Aliev, E. M. Kerimova, S. A. Aliev

Photoconductivity of coarse-grained CdTe polycrystals

S. A. Medvedev, Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok, A. F. Plotnikov

Time-resolved photoluminescence of polycrystalline GaN layers on metal substrates

A. V. Andrianov, K. Yamada, H. Tampo, H. Asahi, V. Yu. Nekrasov, Z. N. Petrovskaya, O. M. Sreseli, N. N. Zinov’ev

Low-threshold defect formation and modification of Ge surface layer under elastic and elastoplastic pulsed laser effects

S. V. Vintsents, V. B. Zaitsev, A. V. Zoteev, G. S. Plotnikov, A. I. Rodionov, A. V. Chervyakov

Electron tunneling through a double barrier in a reverse-biased metal-oxide-silicon structure

G. G. Kareva, M. I. Vexler, I. V. Grekhov, A. F. Shulekin

Structure of heterointerfaces and photoluminescence properties of GaAs/AlAs superlattices grown on (311)A and (311)B surfaces: Comparative analysis

G. A. Lyubas, N. N. Ledentsov, D. Litvinov, B. R. Semyagin, I. P. Soshnikov, V. M. Ustinov, V. V. Bolotov, D. Gerthsen

Wavelength of emission from InGaAsN quantum wells as a function of composition of the quaternary compound

A. E. Zhukov, A. R. Kovsh, E. S. Semenova, V. M. Ustinov, L. Wei, J. -S. Wang, J. Y. Chi

Two-dimensional p-n junction under equilibrium conditions

A. Sh. Achoyan, A. É. Yesayan, É. M. Kazaryan, S. G. Petrosyan

Calculations of the charge-carrier mobility and the thermoelectric figure of merit for multiple-quantum-well structures

D. A. Pshenai-Severin, Yu. I. Ravich

Nonlinear response and nonlinear coherent generation in resonant-tunneling diode in a broad frequency range

V. F. Elesin, I. Yu. Kateev, A. I. Podlivaev

Anomalies of the fractional quantum hall effect in a wide ballistic wire

Z. D. Kvon, E. B. Olshanetsky, A. E. Plotnikov, A. I. Toropov, J. C. Portal

Special features of electrical conductivity in a parabolic quantum well in a magnetic field

E. P. Sinyavskii, R. A. Khamidullin

Manifestation of A(+) centers in the luminescence of two-dimensional GaAs/AlGaAs structures

Yu. L. Ivanov, N. V. Agrinskaya, P. V. Petrov, V. M. Ustinov, G. É. Tsyrlin

One-dimensional photonic crystal obtained by vertical anisotropic etching of silicon

V. A. Tolmachev, L. S. Granitsyna, E. N. Vlasova, B. Z. Volchek, A. V. Nashchekin, A. D. Remenyuk, E. V. Astrova

Gamma-irradiation-induced metastable states of undoped amorphous hydrogenated silicon

M. S. Ablova, G. S. Kulikov, S. K. Persheev

Fabrication and properties of amorphous hydrogenated boron carbide films

A. S. Anan’ev, O. I. Kon’kov, V. M. Lebedev, A. N. Novokhatski, E. I. Terukov, I. N. Trapeznikova

Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov, E. A. Kognovitskaya

Viktor Il’ich Fistul’ (on his 75th birthday)