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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 11/2024

01.04.2024

Significant advancements in passivating crystalline silicon surfaces achieved through the implementation of metal-doped zinc oxide layers

verfasst von: M. Salem, A. Haouas, H. Ghannam, A. Almohammedi, I. Massoudi

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2024

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Abstract

A thorough investigation was undertaken to compare ZnO nanostructured films doped with transition metals (M = Fe, Cu, and Cr) and their functional characteristics, with a specific focus on their potential applications in passivating silicon (Si) solar cells. Through a co-precipitation and spin coating process, both pure and M-doped ZnO nanostructured films were synthesized. Structural analyses revealed the presence of hexagonal wurtzite formation in all films. Reflectivity and lifetime measurements indicated an improvement in both parameters for doped ZnO on Si surfaces. Photocurrent density measurements exhibited a range from 2.5 µA/cm² for pristine ZnO to 25, 8, and 19 µA/cm² for Fe, Cu, and Cr-doped samples, respectively, showcasing distinct variations in performance. These compelling results position the coated layers as promising candidates for cutting-edge optoelectronic applications.
Vorheriger Artikel The impact of carbonization temperature on the microwave-absorbing properties of hollow porous carbon spheres
Nächster Artikel Cu/Ni-loaded oxygen vacancy-rich CeO2 rod derived from metal organic framework for efficient photothermal CO2 hydrogenation

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Literatur
1.
A.G. Aber, S. Glunz, W. Warta, Field effect passivation of high efficiency silicon solar cells. Sol Energy Mater. Sol Cells. 29, 175–182 (1993)CrossRef
2.
L.E. Black, van de B.W.H. Loo, B. Macco, J. Melskens, W.M.M. BerghuisWJH, Kessels, Explorative studies of novel siliconsurface passivation materials: considerations and lessons learned. Sol Energy Mater. Sol Cells. 188, 182–189 (2018)CrossRef
3.
Z. Wu, L. Zhang, R. Chen, W. Liu, Z. Li, F. Meng, Z. Liu, Improved amorphous/crystalline silicon interface passivation for silicon heterojunction solar cells by hot-wire atomic hydrogen during doped a-Si:H deposition. Appl. Surf. Sci. 475, 504–509 (2019)CrossRef
4.
Z. Rui, Y. Zeng, X. Guo, Q. Yang, Z. Wang, C. Shou, W. Ding, J. Yang, X. Zhang, Q. Wang, H. Jin, M. Liao, S. Huang, B. Yan, J. Ye, On the passivation mechanism of poly-silicon and thin silicon oxide on crystal silicon wafers. Sol Energy. 194, 18–26 (2019)CrossRef
5.
H. Huang, C. Modanese, S. Sun, G. von Gastrow, J. Wang, T.P. Pasanen, S. Li, L. Wang, Y. Bao, Z. Zhu, S. Sneck, H. Savin, Effective passivation of p + and n + emitters using SiO2/Al2O3/SiNx stacks: surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells. Sol Energy Mater. Sol Cells. 186, 356–364 (2018)CrossRef
6.
R. Peibst, Y. Larionova, S. Reiter et al., Building blocks for industrial, screen-printed double-side contacted POLO cells with highly transparent ZnO:Al layers. IEEE J. Photovoltaics. 8(3), 719–725 (2018)
7.
S. Zhong, J. Dreon, Q. Jeangros, E. Aydin, S. De Wolf, F. Fu, M. Boccard, C. Ballif, Mitigating plasmonic absorption losses at rear electrodes in high-efficiency silicon solar cells using dopant-free contact stacks. Adv. Funct. Mater. 30, 1907840 (2020)CrossRef
8.
M. Salem, H. Ghannam, A. Almohammedi, I. Massoudi, Ag doped ZnO thin films deposited by spin coating for silicon surface passivation. Silicon. 15, 7321–7326 (2023)CrossRef
9.
M. Salem, J. Salem, H. Ghannam, I. Massoudi, F. Bourguiba, M. Gaidi, Optical and passivation properties of ZnO:Fe on silicon substrates. J. Mater. Sci.: Mater. Electron. 34, 332 (2023)
10.
M. Salem, H. Ghannam, J. Salem, S. Ben Moussa, I. Massoudi, M. Gaidi, Effect of Cu-doped ZnO Thin films on the electron–hole pair lifetime in silicon wafers. Silicon. 15, 5541–5546 (2023)CrossRef
11.
12.
B. Yahmadi, O. Kamoun, B. Alhalaili, S. Alleg, R. Vidu, N. Kamoun Turki, Physical investigations of (Co, Mn) co-doped ZnO nanocrystalline films. Nanomaterials 10, 1507 (2020)CrossRefPubMedPubMedCentral
13.
D. Vu Dao, M. van den Bremt, Z. Koeller, T. Khoa Le, Effect of metal ion doping on the optical properties and the deactivation of photocatalytic activity of ZnO nanopowder for the application in sunscreens. Powder Technol. 288, 366–370 (2016)CrossRef
14.
J. Haipeng, L. Wang, S. Maxim. Molokeev, N. Hirosaki, R. Xie, Z. Huang, Z. Xia, M. Otmar, T. Kate, L. Liub, V. Victor, Structure evolution and photoluminescence of Lu3(Al, Mg)2(Al, Si)3O12:Ce3+ phosphors: new yellow-color converters for blue LED-driven solid state lighting. J. Mater. Chem. C 4, 6855–6863 (2016)CrossRef
15.
C. Lim, A. Aleksandrovsky, M. Molokeev, A. Oreshonkov, V. Atuchin, Structural and spectroscopic effects of Li + substitution for Na + in LixNa1 xCaGd0.5Ho0.05Yb0.45(MoO4)3 scheelite-type up conversion phosphors. Molecules 26, 7357 (2021)CrossRefPubMedPubMedCentral
16.
V.V. Atuchin, B.G. Bazarov, T.A. Gavrilova, V.G. Grossman, M.S. Molokeev, Z.G. Bazarova, Preparation and structural properties of nonlinear optical borates K2(1 – x)Rb2xAl2B2O7, 0 < x < 0.75. Alloys Compd. 515, 119–122 (2012)CrossRef
17.
M. Sharmin, J. Podder, Influence of Al doping on the structure and properties of Fe2O3 thin films: high transparency, wide band gap, ferromagnetic behavior. Semicond. Sci. Technol. 34, 75033 (2019)CrossRef
18.
S. Anil Kadam, S. Anna Thomas, Y.-R. Ma, L. Maria Jose, D. Sajan, A. Aravind, Investigation of adsorption and photocatalytic behavior of manganese doped zinc oxide nanostructures. Inorgan. Chem. Commun. 134, 108981 (2021)CrossRef
19.
A. Badawi, M.G. Althobaiti, S.S. Alharthi, A.M. Al-Baradi, Tailoring the optical properties of CdO nanostructures via barium doping for optical windows applications. Phys. Lett. 411, 127553 (2021)CrossRef
20.
N. Rom, R. Kosti, M. Rom, B. Had, I. Kuryliszyn Kudelska, W. Dobrowolski, U. Narkiewicz, D. Sibera, Raman scattering from ZnO (Fe) nanoparticles. Acta Phys. Polonica A 114, 1323 (2008)CrossRef
21.
L. Duan, X. Zhao, Z. Zheng, Y. Wang, W. Geng, F. Zhang, Structural, optical and photocatalytic properties of (Mg, Al) co-doped ZnO powders prepared by sol–gel method. J. Phys. Chem. Solids 76, 88 (2015)CrossRef
22.
C. Wang, Z. Chen, Y. He, L. Li, D. Zhang, Structure, morphology and properties of Fe-doped ZnO films prepared by facing-target magnetron sputtering system. Appl. Surf. Sci. 255, 6881 (2009)CrossRef
23.
S. Roy, M.P. Ghosh, S. Mukherjee, Enhancing dielectric properties of ZnO nanopowders with 2D hBN doping: production, structural, morphological and dielectric characterization. Appl. Phys. A 127, 451 (2021)CrossRef
24.
Y. Jia, P. Gong, S.-L. Li, W. Ma, X. Fang, Y. Yang, M. Cao, Effects of hydroxyl groups and hydrogen passivation on the structure, electrical and optical properties of silicon carbide nanowires. Phys. Lett. A 384, 126106 (2020)CrossRef
25.
M. Salem, Z. Yamlahi Alami, B. Bessais, A. Chahboun, M. Gaidi, Structural and optical properties of ZnO nanoparticles deposited on porous silicon for mc-Si passivation. J. Nanopart. Res. 17, 137 (2015)CrossRef
26.
T. Srinivasulu, K. Saritha, K.T. Ramakrishna Reddy, Synthesis and characterization of Fe-doped ZnO thin films deposited by chemical spray pyrolysis. Mod. Electron. Mater. 3, 76–85 (2017)CrossRef
27.
A.F. Al-Naim, A. Sedky, N. Afify, S.S. Ibrahim, Structural, FTIR spectra and optical properties of pure and co-doped Zn1-x-yFexMyO ceramics with (M = Cu, Ni) for plastic deformation and optoelectronic applications. Appl. Phys. Mater. Sci. Process. 127(11), 840 (2021)CrossRef
28.
M. Salem, H. Ghannam, A. Almohammedi, J. Salem, I. Rashid Bouazzi, I. Massoudi, M. Gaidi, Improved photoelectrochemical sensitivity of Al-doped ZnO nanostructure prepared by co-precipitation and spin-coating techniques. Mater. Lett. 352, 135085 (2023)CrossRef
29.
F. Mikaeili, T. Gilmore, P.I. Gouma, Photochemical water splitting via transition metal oxides. Catalysts 12, 1303 (2022)CrossRef
30.
S. Brajendra, V. Garg, A. Kumar, V. Awasthi, S. Kumar, V. Atuchin, S. Mukherjee, Band alignment of Cd-free (Zn, Mg)O layer with Cu2ZnSn(S,Se)4 and its effect on the photovoltaic properties. Opt. Mater. 84, 748–756 (2018)CrossRef
31.
V. Garg, S. Brajendra, V. Awasthi, A. Kumar, R. Singh, S. Kumar, C. Mukherjee, V.V. Atuchin, S. Mukherjee, Investigation of dual-ion beam sputter-instigated plasmon generation in TCOs: a case study of GZO. ACS Appl. Mater. Interfaces 10, 5464–5474 (2018)CrossRefPubMed
32.
V.G. Litovchenko, V.M. Naseka, A.A. Evtukh, Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer. Ukr. J. Phys. 58(2), 142 (2012)
33.
L. Yang, W. Liu, H. Yan, X. Yu, P. Gong, Y. Li, X. Fang, Structural evolution, interlayer coupling, band-gap, and optical properties of non-layered SiCNSs. Eur. Phys. J. Plus. 139, 66 (2024)CrossRef
34.
P. Gong, Y. Yang, W. Ma, X. Fang, X. Jing, Y. Jia, M. Cao, Transport and recombination properties of group-III doped SiCNTs. Phys. E. 128, 114578 (2021)CrossRef
Metadaten
Titel
Significant advancements in passivating crystalline silicon surfaces achieved through the implementation of metal-doped zinc oxide layers
verfasst von
M. Salem
A. Haouas
H. Ghannam
A. Almohammedi
I. Massoudi
Publikationsdatum
01.04.2024
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 11/2024
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-024-12550-3

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