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2014 | OriginalPaper | Buchkapitel

Silicon Atomic Quantum Dots Enable Beyond-CMOS Electronics

verfasst von : Robert A. Wolkow, Lucian Livadaru, Jason Pitters, Marco Taucer, Paul Piva, Mark Salomons, Martin Cloutier, Bruno V. C. Martins

Erschienen in: Field-Coupled Nanocomputing

Verlag: Springer Berlin Heidelberg

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Abstract

We review our recent efforts in building atom-scale quantum-dot cellular automata circuits on a silicon surface. Our building block consists of silicon dangling bond on a H-Si(001) surface, which has been shown to act as a quantum dot. First the fabrication, experimental imaging, and charging character of the dangling bond are discussed. We then show how precise assemblies of such dots can be created to form artificial molecules. Such complex structures can be used as systems with custom optical properties, circuit elements for quantum-dot cellular automata, and quantum computing. Considerations on macro-to-atom connections are discussed.

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Vorheriges Kapitel Nanomagnet Logic (NML)

Nächstes Kapitel A Clocking Strategy for Scalable and Fault-Tolerant QDCA Signal Distribution in Combinational and Sequential Devices

Lent, C.S., Tougaw, P.D., Porod, W., Bernstein, B.H.: Quantum cellular automata. Nanotechnology 4, 49–57 (1993)CrossRef

Lent, C.S., Tougaw, P.D.: A device architecture for computing with quantum dots. Proc. IEEE 85(4), 541–557 (1997)CrossRef

Orlov, A.O., Kummamuru, R., Timler, J., Lent, C.S., Snider, G.L., Bernstein, G.H.: Experimental Studies of Quantum Dot Cellular Automata Devices. Research Signpost, Trivandrum (2004)

Yadavalli, K.K., Orlov, A.O., Timler, J.P., Lent, C.S., Snider, G.L.: Fanout gate in quantum-dot cellular automata. Nanotechnology 18(37), 375401 (2007)CrossRef

Tang, Y., Orlov, A.O., Snider, G.L., Fay, P.J.: Towards real-time testing of clocked quantum dot cellular automata. In: Nanotechnology Materials and Devices Conference, 2009. NMDC’09. IEEE, pp. 76–79. IEEE (2009)

Joyce, R.A., Qi, H., Fehlner, T.P., Lent, C.S., Orlov, A.O., Snider, G.L.: A system to demonstrate the bistability in molecules for application in a molecular QCA cell. In: Nanotechnology Materials and Devices Conference, 2009. NMDC’09. IEEE, pp. 46–49. IEEE (2009)

Foley, E.T., Kam, A.F., Lyding, J.W., Avouris, P.: Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si(100). Phys. Rev. Lett. 80(6), 1336 (1998)CrossRef

Shen, T.-C., Wang, C., Abeln, G.C., Tucker, J.R., Lyding, J.W., Avouris, P., Walkup, R.E.: Atomic-scale desorption through electronic and vibrational excitation mechanisms. Science 268, 1590–1592 (1995)CrossRef

Stokbro, K., Thirstrup, C., Sakurai, M., Quaade, U., Hu, B.Y.-K., Perez-Murano, F., Grey, F.: STM-induced hydrogen desorption via a hole resonance. Phys. Rev. Lett. 80(12), 2618 (1998)CrossRef

10.

Soukiassian, L., Mayne, A., Carbone, M., Dujardin, G.: Atomic-scale desorption of H atoms from the Si(100)-\(2 \times 1\): H surface: inelastic electron interactions. Phys. Rev. B 68(3), 035303 (2003)CrossRef

11.

Kuramochi, H., Uchida, H., Kuwahara, Y., Watanabe, K., Aono, M.: Site-independent adsorption of hydrogen atoms deposited from a scanning tunneling microscope tip onto a Si(111)-\(7 \times 7\) surface. Jpn. J. Appl. Phys. 36(10A), L1343–L1346 (1997)CrossRef

12.

Pitters, J.L., Livadaru, L., Haider, M.B., Wolkow, R.A.: Tunnel coupled dangling bond structures on hydrogen terminated silicon surfaces. J. Chem. Phys. 134(6), 064712 (2011)CrossRef

13.

Tong, X., Wolkow, R.A.: Electron-induced H atom desorption patterns created with a scanning tunneling microscope: implications for controlled atomic-scale patterning on H:Si(100). Surf. Sci. 600(16), L199–L203 (2006)CrossRef

14.

Haider, M., Pitters, J.L., DiLabio, G., Livadaru, L., Mutus, J., Wolkow, R.: Controlled coupling and occupation of silicon atomic quantum dots at room temperature. Phys. Rev. Lett. 102(4), 046805 (2009)CrossRef

15.

Livadaru, L., Pitters, J.L., Taucer, M., Wolkow, R.A.: Theory of nonequilibrium single-electron dynamics in STM imaging of dangling bonds on a hydrogenated silicon surface. Phys. Rev. B 84(20), 205416 (2011)CrossRef

16.

Taucer, M., Livadaru, L., Piva, P.G., Achal, R., Labidi, H., Pitters, J.L., Wolkow, R.A.: Single electron charging dynamics of atomic silicon quantum dots on the H-Si(100) surface. arXiv:1305.3597

17.

Oura, K., Lifshits, V.G., Saranin, A.A., Zotov, A.V., Katayama, M.: Hydrogen interaction with clean and modified silicon surfaces. Surf. Sci. Rep. 35, 1–69 (1999)CrossRef

18.

Lopinski, G.P., Wayner, D.D.M., Wolkow, R.A.: Self-directed growth of molecular nanostructures on silicon. Nature 406, 48–51 (2000)CrossRef

19.

Piva, P.G., DiLabio, G.A., Pitters, J.L., Zikovsky, J., Rezeq, M., Dogel, S., Hofer, W.A., Wolkow, R.A.: Field regulation of single-molecule conductivity by a charged surface atom. Nature 435(7042), 658–661 (2005)CrossRef

20.

Piva, P.G., DiLabio, G.A., Pitters, J.L., Wolkow, R.A.: Electrostatically regulated atomic scale electroconductivity device

21.

Shockley, W., et al.: Electrons and Holes in Semiconductors, vol. 1. van Nostrand, New York (1963)

22.

Baseer Haider, M., Pitters, J.L., DiLabio, G.A., Livadaru, L., Mutus, J.Y., Wolkow, R.A.: Controlled coupling and occupation of silicon atomic quantum dots. arXiv:0807.0609

23.

Livadaru, L., Xue, P., Shaterzadeh-Yazdi, Z., DiLabio, G.A., Mutus, J., Pitters, J.L., Sanders, B.C., Wolkow, R.A.: Dangling-bond charge qubit on a silicon surface. New J. Phys. 12(8), 083018 (2010)CrossRef

24.

Shaterzadeh-Yazdi, Z., Livadaru, L., Taucer, M., Mutus, J., Pitters, J.L., Wolkow, R.A., Sanders, B.C.: On measuring coherence in coupled dangling-bond dynamics (2013). arXiv:1305.6359

25.

Piva, P.G., Wolkow, R.A., Kirczenow, G.: Nonlocal conductance modulation by molecules: scanning tunneling microscopy of substituted styrene heterostructures on H-terminated Si(100). Phys. Rev. Lett. 101(10), 106801 (2008)CrossRef

26.

Kirczenow, G., Piva, P.G., Wolkow, R.A.: Modulation of electrical conduction through individual molecules on silicon by the electrostatic fields of nearby polar molecules: theory and experiment. Phys. Rev. B 80(3), 035309 (2009)CrossRef

27.

Tong, X., Wolkow, R.A.: Scanning tunneling microscopy characterization of low-profile crystalline \({\rm TiSi}_{2}\) microelectrodes on a Si(111) surface. Appl. Phys. Lett. 86(20), 203101 (2005)CrossRef

28.

Palermo, V., Buchanan, M., Bezinger, A., Wolkow, R.A.: Lateral diffusion of titanium disilicide as a route to contacting hybrid Si/organic nanostructures. Appl. Phys. Lett. 81(19), 3636 (2002)CrossRef

29.

Pitters, J.L., Dogel, I.A., Wolkow, R.A.: Charge control of surface dangling bonds using nanoscale Schottky contacts. ACS Nano 5(3), 1984–1989 (2011)CrossRef

30.

Zikovsky, J., Salomons, M.H., Dogel, S.A., Wolkow, R.A.: Silicon surface conductance investigated using a multiple-probe scanning tunneling microscope. In: Joachim, C. (ed.) Atomic Scale Interconnection Machines: Proceedings of the 1st AtMol European Workshop Singapore 28th–29th June 2011. Advances in Atom and Single Molecule Machines, vol. 1, pp. 167–180. Springer, Berlin (2012). ISBN 978-3-642-28171-6

31.

Martins, B.V.C., Smeu, M., Guo, H., Wolkow, R.A.: Conductivity of Si(111)-\(7 \times 7\): the role of a single atomic step. arXiv:1310.1313

32.

Martins, B.V.C., Wolkow, R.A.: (2013, in preparation)

33.

Lyding, J.W., Shen, T.C., Hubacek, J.R., Tucker, J.R., Abeln, G.C.: Nanoscale patterning and oxidation of H-passivated Si(100)-\(2\times 1\) surfaces with an ultrahigh vacuum scanning tunneling microscope. Appl. Phys. Lett. 64(15), 2010–2012 (1994)CrossRef

34.

Raza, H.: Theoretical study of isolated dangling bonds, dangling bond wires, and dangling bond clusters on a H:Si(001)-(\(2 \times 1\)) surface. Phys. Rev. B 76(4), 045308 (2007)CrossRef

35.

Ye, W., Min, K., Martin, P.P., Rockett, A.A., Aluru, N.R., Lyding, J.W.: Scanning tunneling spectroscopy and density functional calculation of silicon dangling bonds on the Si(100)-\(2 \times 1\): H surface. Surf. Sci. 609, 147–151 (2013)CrossRef

36.

Schofield, S.R., Studer, P., Hirjibehedin, C.F., Curson, N.J., Aeppli, G., Bowler, D.R.: Quantum engineering at the silicon surface using dangling bonds. Nat. Commun. 4, 1649 (2013)CrossRef

37.

Jahromi, S.A.Z., Salomons, M., Sun, Q., Wolkow, R.A.: Prediction of the resonant frequency of piezoelectric tube scanners through three-dimensional finite element modeling of a tube assembly. Rev. Sci. Instrum. 79(7), 3 (2008)

38.

Randall, J.N., Von Ehr, J.R., Ballard, J.B., Owen, J.H.G., Fuchs, E.: Automated Scanning Tunneling Microscope image analysis of Si(100): H \(2 \times 1\) surfaces. Microelectron. Eng. 98, 214–217 (2012)CrossRef

39.

Hänninen, I., Takala, J.: Arithmetic design on quantum-dot cellular automata nanotechnology. In: Bereković, M., Dimopoulos, N., Wong, S. (eds.) SAMOS 2008. LNCS, vol. 5114, pp. 43–52. Springer, Heidelberg (2008) CrossRef

40.

Kane, B.E.: A silicon-based nuclear spin quantum computer. Nature 393(6681), 133–137 (1998)CrossRef

41.

Fuechsle, M., Miwa, J.A., Mahapatra, S., Ryu, H., Lee, S., Warschkow, O., Hollenberg, L.C., Klimeck, G., Simmons, M.Y.: A single-atom transistor. Nat. Nanotechnol. 7(4), 242–246 (2012)CrossRef

42.

Fuechsle, M., Miwa, J.A., Mahapatra, S., Ryu, H., Lee, S., Warschkow, O., Hollenberg, L.C.L., Klimeck, G., Simmons, M.Y.: Spectroscopy of a deterministic single-donor device in silicon. Proc. SPIE 8400, 840006 (2012)CrossRef

43.

Tan, K.Y., Chan, K.W., Mottonen, M., Morello, A., Yang, C., van Donkelaar, J., Alves, A., Pirkkalainen, J.M., Jamieson, D.N., Clark, R.G., Dzurak, A.S.: Transport spectroscopy of single phosphorus donors in a silicon nanoscale transistor. Nano Lett. 10(1), 11–15 (2010)CrossRef

44.

Kane, B.E.: Can we build a large-scale quantum computer using semiconductor materials? MRS Bull. 30, 105–110 (2005)CrossRef

45.

Loss, D., DiVincenzo, D.P.: Quantum computation with quantum dots. Phys. Rev. A 57(1), 120 (1998)CrossRef

46.

Fowler, A.G., Mariantoni, M., Martinis, J.M., Cleland, A.N.: Surface codes: towards practical large-scale quantum computation. Phys. Rev. A 86(3), 032324 (2012)CrossRef

Titel: Silicon Atomic Quantum Dots Enable Beyond-CMOS Electronics
verfasst von: Robert A. Wolkow
Lucian Livadaru
Jason Pitters
Marco Taucer
Paul Piva
Mark Salomons
Martin Cloutier
Bruno V. C. Martins
Verlag: Springer Berlin Heidelberg
Buch: Field-Coupled Nanocomputing
Print ISBN: 978-3-662-43721-6

Electronic ISBN: 978-3-662-43722-3

Copyright-Jahr: 2014
DOI: https://doi.org/10.1007/978-3-662-43722-3_3

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