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Erschienen in:
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2010 | OriginalPaper | Buchkapitel

7. SJ-MOSFET Structure

verfasst von : B. Jayant Baliga

Erschienen in: Advanced Power MOSFET Concepts

Verlag: Springer US

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Abstract

The power MOSFET structures discussed in the last two chapters utilize two-dimensional charge coupling for supporting the drain voltage when operating in the blocking mode. The charge coupling is achieved in these devices by utilizing a source electrode located within an oxide coated trench oriented orthogonal to the wafer surface. In these structures, a depletion layer is simultaneously formed across a horizontal P-N junction and a vertical MOS interface at the trench sidewalls. The simultaneous depletion in the x- and y-directions produces the desired two-dimensional charge coupling which improves the electric field distribution and allows using very high doping levels for the drift region.

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Vorheriges Kapitel GD-MOSFET Structure
Nächstes Kapitel Integral Diode
Literatur
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Metadaten
Titel
SJ-MOSFET Structure
verfasst von
B. Jayant Baliga
Copyright-Jahr
2010
Verlag
Springer US
Buch
Advanced Power MOSFET Concepts

Print ISBN: 978-1-4419-5916-4

Electronic ISBN: 978-1-4419-5917-1

Copyright-Jahr: 2010

DOI
https://doi.org/10.1007/978-1-4419-5917-1_7

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