Ausgabe 5/2015
2014 Electronic Materials Conference. Guest Editors: Angel Yanguas-Gil, Ganesh Balakrishnan, Joshua D. Cladwell, Jamie Phillips, Joshua Zide, Michael Tiscler, John Baniecki, Suzanne Mohney, and Shadi Shahedipour-Sandvik
Inhalt (20 Artikel)
Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices
Ashwin K. Rishinaramangalam, Saadat Mishkat Ul Masabih, Michael N. Fairchild, Jeremy B. Wright, Darryl M. Shima, Ganesh Balakrishnan, Igal Brener, S.R.J. Brueck, Daniel F. Feezell
AlGaN/AlN-GaN-SL HEMTs with Multiple 2DEG Channels
Ada Wille, Hady Yacoub, Arne Debald, Holger Kalisch, Andrei Vescan
Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
H. Wang, M. Dudley, F. Wu, Y. Yang, B. Raghothamachar, J. Zhang, G. Chung, B. Thomas, E.K. Sanchez, S.G. Mueller, D. Hansen, M.J. Loboda
Thermal Resistance Extraction of AlGaN/GaN Depletion-Mode HEMTs on Diamond
Jianzhi Wu, Jie Min, Wei Lu, Paul. K. L. Yu
Defect-Related Luminescence in Undoped GaN Grown by HVPE
M.A. Reshchikov, A. Usikov, H. Helava, Yu. Makarov
Modeling of Threading Dislocation Density Reduction in Porous III-Nitride Layers
Dmitry M. Artemiev, Tatiana S. Orlova, Vladislav E. Bougrov, Maxim A. Odnoblyudov, Alexei E. Romanov
Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers
Fangzhen Wu, Huanhuan Wang, Balaji Raghothamachar, Michael Dudley, Gil Chung, Jie Zhang, Bernd Thomas, Edward K. Sanchez, Stephan G. Mueller, Darren Hansen, Mark J. Loboda, Lihua Zhang, Dong Su, Kim Kisslinger, Eric Stach
Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications
Huseyin Ekinci, Vladimir V. Kuryatkov, Daniel L. Mauch, James C. Dickens, Sergey A. Nikishin
Gettering of Luminescent Point Defects along Step Bunching in 4H-SiC Epitaxial Layers by Ultraviolet Excitation
N.A. Mahadik, R.E. Stahlbush
Effects of Lattice Relaxation on Composition and Morphology in Strained In x Ga1−x As y Sb1−y Epitaxial Layers
Charles Meyer, Nicholas Cole, Corey Matzat, Emily Cheng, Gregory Triplett
Low Temperature, Rapid Thermal Cycle Annealing of HgCdTe Grown on CdTe/Si
Sina Simingalam, Gregory Brill, Priyalal Wijewarnasuriya, Mulpuri V. Rao
Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes
E. J. Renteria, A. J. Muniz, S. J. Addamane, D. M. Shima, C. P. Hains, G. Balakrishnan
Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires
Mel Hainey Jr., Sarah M. Eichfeld, Haoting Shen, Joanne Yim, Marcie R. Black, Joan M. Redwing
Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001)
William A. O’Brien, Meng Qi, Lifan Yan, Chad A. Stephenson, Vladimir Protasenko, Huili Xing, Joanna M. Millunchick, Mark A. Wistey
Comparison of Gas Sensors Based on Oxygen Plasma-Treated Carbon Nanotube Network Films with Different Semiconducting Contents
Seung Woo Ham, Hyun Pyo Hong, Jin Woong Kim, Jong Hyun Kim, Ki Bum Kim, Chan Won Park, Nam Ki Min
Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire
Hiroshi Chiba, Tatsuya Mori, Tomoyuki Kawashima, Katsuyoshi Washio
Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor
Nick M. Sbrockey, Thomas Salagaj, Elane Coleman, Gary S. Tompa, Youngboo Moon, Myung Sik Kim
Improving Metal-Oxide-Metal (MOM) Diode Performance Via the Optimization of the Oxide Layer
Linzi E. Dodd, Samantha A. Shenton, Andrew J. Gallant, David Wood
Novel Materials with Effective Super Dielectric Constants for Energy Storage
Francisco Javier Quintero Cortes, Jonathan Phillips
Effect of Diffusion Control Layer on Reverse Al-Induced Layer Exchange Process for High-Quality Ge/Al/Glass Structure
K. Nakazawa, K. Toko, T. Suemasu