Ausgabe 6/2004
Inhalt (45 Artikel)
Feasibility study of cadmium zinc telluride growth using a submerged heater in a vertical bridgman system
Andrew Yeckel, Jeffrey J. Derby
Molecular beam epitaxial growth of Cd1−yZnySexTe1−x on Si(211)
Y. P. Chen, G. Brill, E. M. Campo, T. Hierl, J. C. M. Hwang, N. K. Dhar
HgTe/HgCdTe superlattices grown on CdTe/Si by molecular beam epitaxy for infrared detection
Y. Selamet, Y. D. Zhou, J. Zhao, Y. Chang, C. R. Becker, R. Ashokan, C. H. Grein, S. Sivananthan
HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection
E. P. G. Smith, L. T. Pham, G. M. Venzor, E. M. Norton, M. D. Newton, P. M. Goetz, V. K. Randall, A. M. Gallagher, G. K. Pierce, E. A. Patten, R. A. Coussa, K. Kosai, W. A. Radford, L. M. Giegerich, J. M. Edwards, S. M. Johnson, S. T. Baur, J. A. Roth, B. Nosho, T. J. De Lyon, J. E. Jensen, R. E. Longshore
Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band HgCdTe detectors
R. A. Coussa, A. M. Gallagher, K. Kosai, L. T. Pham, G. K. Pierce, E. P. Smith, G. M. Venzor, T. J. De Lyon, J. E. Jensen, B. Z. Nosho, J. A. Roth, J. R. Waterman
HgCdTe/Si materials for long wavelength infrared detectors
S. M. Johnson, A. A. Buell, M. F. Vilela, J. M. Peterson, J. B. Varesi, M. D. Newton, G. M. Venzor, R. E. Bornfreund, W. A. Radford, E. P. G. Smith, J. P. Rosbeck, T. J. De Lyon, J. E. Jensen, V. Nathan
Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance
M. Carmody, J. G. Pasko, D. Edwall, M. Daraselia, L. A. Almeida, J. Molstad, J. H. Dinan, J. K. Markunas, Y. Chen, G. Brill, N. K. Dhar
Processing and characterization of a-Si:H photoresists for a vacuum-compatible photolithography process
R. N. Jacobs, A. J. Stoltz, E. W. Robinson, P. R. Boyd, L. A. Almeida, J. H. Dinan, L. Salamanca-Riba
Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches
J. D. Benson, A. J. Stoltz, J. B. Varesi, M. Martinka, A. W. Kaleczyc, L. A. Almeida, P. R. Boyd, J. H. Dinan
Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon
C. Miclaus, G. Malouf, S. M. Johnson, D. R. Rhiger, M. S. Goorsky
Wet-chemical etching of (110) ZnO films0) ZnO films
J. Zhu, N. W. Emanetoglu, Y. Chen, B. V. Yakshinskiy, Y. Lu
Correlation of laser-beam-induced current with current-voltage measurements in HgCdTe photodiodes
D. A. Redfern, C. A. Musca, J. M. Dell, L. Faraone
Laser-beam-induced current mapping of spatial nonuniformities in molecular beam epitaxy As-grown HgCdTe
R. H. Sewell, C. A. Musca, J. Antoszewski, J. M. Dell, L. Faraone
Annealing effects of a high-quality ZnTe substrate
Kenji Yoshino, Minoru Yoneta, Kenzo Ohmori, Hiroshi Saito, Masakazu Ohishi, Takayuki Yabe
In-situ ellipsometry studies of adsorption of Hg on CdTe(211)B/Si(211) and molecular beam epitaxy growth of HgCdTe(211)B
G. Badano, Y. Chang, J. W. Garland, S. Sivananthan
Arsenic-doped mid-wavelength infrared HgCdTe photodiodes
M. A. Kinch, D. Chandra, H. F. Schaake, H. -D. Shih, F. Aqariden
Li diffusion in epitaxial (110) ZnO thin films
P. Wu, J. Zhong, N. W. Emanetoglu, Y. Chen, S. Muthukumar, Y. Lu
A 5 mm×5 mm mid-wavelength infrared HgCdTe photodiode array with negative luminescence efficiency ∼95%
J. R. Lindle, W. W. Bewley, I. Vurgaftman, J. R. Meyer, J. L. Johnson, M. L. Thomas, E. C. Piquette, W. E. Tennant
Resonant cavity-enhanced mercury cadmium telluride detectors
J. G. A. Wehner, T. N. Nguyen, J. Antoszewski, C. A. Musca, J. M. Dell, L. Faraone
Advanced thermoelectrically cooled midwave HgCdTe focal plane arrays
Muren Chu, S. Mesropian, S. Terterian, H. K. Gurgenian, M. Pauli
Performance characteristics of planar ion-implantation isolated heterojunction, near-infrared, and short-wave infrared HgCdTe devices
S. Terterian, M. Chu, S. Mesropian, H. Gurgenian, J. D. Benson, J. H. Dinan
Dark currents in long wavelength infrared HgCdTe gated photodiodes
T. Nguyen, C. A. Musca, J. M. Dell, J. Antoszewski, L. Faraone
HgCdTe electron avalanche photodiodes
M. A. Kinch, J. D. Beck, C. -F. Wan, F. Ma, J. Campbell
Distribution of the high resistivity region in CdZnTe and its effects on gamma-ray detector performance
S. Terterian, M. Chu, D. Ting
Growth of thick CdTe epilayers on GaAs substrates and evaluation of CdTe/n+-GaAs heterojunction diodes for an X-ray imaging detector
M. Niraula, K. Yasuda, Y. Nakanishi, K. Uchida, T. Mabuchi, Y. Agata, K. Suzuki
Growth of large-diameter ZnTe single crystals by liquid-encapsulated melt growth methods
T. Asahi, T. Yabe, K. Sato
ZnO nanotips grown on Si substrates by metal-organic chemical-vapor deposition
J. Zhong, S. Muthukumar, G. Saraf, H. Chen, Y. Chen, Y. Lu
Differential thermal analysis of supercooling in CdTe
I. Turkevych, J. Franc, R. Grill, P. Höschl, E. Belas, P. Moravec
Physical structure of molecular-beam epitaxy growth defects in HgCdTe and their impact on two-color detector performance
A. A. Buell, L. T. Pham, M. D. Newton, G. M. Venzor, E. M. Norton, E. P. Smith, J. B. Varesi, V. B. Harper, S. M. Johnson, R. A. Coussa, T. De Leon, J. A. Roth, J. E. Jensen
Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates
P. Ballet, F. Noël, F. Pottier, S. Plissard, J. P. Zanatta, J. Baylet, O. Gravrand, E. De Borniol, S. Martin, P. Castelein, J. P. Chamonal, A. Million, G. Destefanis
Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structures
J. Antoszewski, L. Faraone, I. Vurgaftman, J. R. Meyer, C. A. Hoffman
Macro-loading effects of electron-cyclotron resonance etched II–VI materials
A. J. Stoltz, J. D. Benson, J. B. Varesi, M. Martinka, M. J. Sperry, A. W. Kaleczyc, L. A. Almeida, P. R. Boyd, J. H. Dinan
Study of the pixel-pitch reduction for HgCdTe infrared dual-band detectors
J. Baylet, O. Gravrand, E. Laffosse, C. Vergnaud, S. Ballerand, B. Aventurier, J. C. Deplanche, P. Ballet, P. Castelein, J. P. Chamonal, A. Million, G. Destefanis
Optical-absorption model for molecular-beam epitaxy HgCdTe and application to infrared detector photoresponse
K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, J. Arias
Near-bandgap infrared absorption properties of HgCdTe
Y. Chang, G. Badano, J. Zhao, Y. D. Zhou, R. Ashokan, C. H. Grein, V. Nathan
High-resolution mapping of infrared photoluminescence
Robert Furstenberg, Jeffrey O. White, John H. Dinan, Gregory L. Olson
Experimental study of non-stoichiometry in Cd1−xZnxTe1±δ
J. H. Greenberg, V. N. Guskov, M. Fiederle, K. -W. Benz
Optical properties of CdSexTe1−x epitaxial films studied by spectroscopic ellipsometry
F. C. Peiris, Z. J. Weber, Y. Chen, G. Brill
Fundamental materials studies of undoped, In-doped, and As-doped Hg1−xCdxTe
C. H. Swartz, R. P. Tompkins, N. C. Giles, T. H. Myers, D. D. Edwall, J. Ellsworth, E. Piquette, J. Arias, M. Berding, S. Krishnamurthy, I. Vurgaftman, J. R. Meyer
Concentrations of native and gold defects in HgCdTe from first principles calculations
Anthony J. Ciani, Serdar Ogut, Inder P. Batra
Development of the high-pressure electro-dynamic gradient crystal-growth technology for semi-insulating CdZnTe growth for radiation detector applications
Csaba Szeles, Scott E. Cameron, Stephen A. Soldner, Jean-Olivier Ndap, Michael D. Reed
Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe
D. Edwall, E. Piquette, J. Ellsworth, J. Arias, C. H. Swartz, L. Bai, R. P. Tompkins, N. C. Giles, T. H. Myers, M. Berding
Investigations into the source of 1/f noise in HgxCd1−xTe diodes
M. K. Ashby, N. T. Gordon, C. T. Elliott, C. L. Jones, C. D. Maxey, L. Hipwood, R. Catchpole
Determination of individual layer composition and thickness in multilayer HgCdTe structures
M. Daraselia, M. Carmody, M. Zandian, J. M. Arias