Ausgabe 10/2006
Inhalt (11 Artikel)
Influence of titanium on the formation of a “barrier” layer during joining an A1N ceramic with copper by the CDB technique
W. Olesińska, D. Kaliński, M. Chmielewski, R. Diduszko, W. K. Włosiński
Physical, electrical, and optical properties of SF-PECVD-grown hydrogenated microcrystalline silicon with growth surface electrical bias
Erik V. Johnson, Sjoerd Hoogland, Ethan Klem, Nazir Kherani, Stefan Zukotynski
Raman scattering characterization of SF-PECVD-grown hydrogenated microcrystalline silicon thin films using growth surface electrical bias
Erik V. Johnson, Nazir P. Kherani, Stefan Zukotynski
Optoelectronic properties n:CdS:In/p-Si heterojunction photodetector
Salwan K. J. Al-Ani, Raid A. Ismail, Hana F. A. Al-Ta’ay
Synthesis, characterization, high temperature phase transition and electrical properties of solid solution AgScMo2O8
Q. B. Bo, C. L. Chen, Y. X. Li, Z. X. Sun, G. X. Sun, J. Meng
Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN
Min-Suk Oh, Ja-Soon Jang, Seong-Ju Park, Tae-Yeon Seong
Effect of deposition conditions on the InP thin films prepared by spray pyrolysis method
M. Öztaş, M. Bedir, R. Kayalı, F. Aksoy
The properties of AlGaN films and AlGaN/GaN heterostructures grown on () sapphire substrates
Wei-Tsai Liao, Jyh-Rong Gong, Shih-Wei Lin, Cheng-Liang Wang, Keh-Chang Chen, Jen-Bin Shi, Sheng-Yueh Chang, Kuan-Jiuh Lin
Sputtered rutile stoichiometric TiO2 nanocrystalline films
A. Vale, N. Chaure, M. Simonds, A. K. Ray, N. Bricklebank