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Journal of Materials Science: Materials in Electronics

Ausgabe 9/2010

Inhalt (16 Artikel)

Investigation of rare earth-doped BiAg high-temperature solders

Yaowu Shi, Weiping Fang, Zhidong Xia, Yongping Lei, Fu Guo, Xiaoyan Li

Adjustment of the selenium amount during ion beam sputtering deposition of CIS thin films

Ping Fan, Guang-Xing Liang, Zhuang-Hao Zheng, Xing-Min Cai, Dong-Ping Zhang

Effect of praseodymium on the microstructure and properties of Sn3.8Ag0.7Cu solder

Lili Gao, Songbai Xue, Liang Zhang, Zhengxiang Xiao, Wei Dai, Feng Ji, Huan Ye, Guang Zeng

Impact of joint materials on the reliability of double-side packaged SiC power devices during high temperature aging

Fengqun Lang, Hiroshi Nakagawa, Masahiro Aoyagi, Hiromichi Ohashi, Hiroshi Yamaguchi

Electron field emission properties of carbon nanoflakes prepared by RF sputtering

Wen-Ching Shih, Jian-Min Jeng, Jyi-Tsong Lo, Huang-Chin Chen, I-Nan Lin

Microwave dielectric properties of Ba5Nb4O15 ceramic by molten salt method

Huanfu Zhou, Xiuli Chen, Liang Fang, Changzheng Hu, Hong Wang

Effect of geometry and dielectric material on thermo-mechanical strain on micro-vias in build-up substrates

Kimihiro Yamanaka, Teruya Fujisaki, Manabu Ichinose, Takafumi Ooyoshi

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