Ausgabe 11/2002
Inhalt (24 Artikel)
Vadim Fedorovich Masterov, a scientist and a teacher
V. K. Ivanov, B. P. Popov
International symposium on photoluminescence and electroluminescence of rare-earth elements in semiconductors and insulators
E. I. Terukov
V. F. Masterov’s school and fullerene research at the department of experimental physics, St. Petersburg State Technical University
A. V. Prikhodko, O. I. Konkov
A model for the formation of donor centers in silicon layers implanted with erbium and oxygen ions
O. V. Aleksandrov, A. O. Zakhar’in
Emission from rare-earth centers in (ZnTe:Yb):O/GaAs
V. M. Konnov, N. N. Loiko, Yu. G. Sadof’ev, A. S. Trushin, E. I. Makhov
Temperature dependences of photoluminescence spectra of single-crystal Ca2GeO4:Cr4+ films
O. N. Gorshkov, E. S. Demidov, E. M. Dianov, A. P. Kasatkin, V. F. Lebedev, G. A. Maksimov, S. A. Tyurin, A. B. Chigineva, Yu. I. Chigirinskii, A. N. Shushunov
Effect of surface state density on room temperature photoluminescence from Si-SiO2 structures in the range of band-to-band recombination in silicon
A. M. Emel’yanov, N. A. Sobolev, S. Pizzini
Buried nanoscale damaged layers formed in Si and SiC crystals as a result of high-dose proton implantation
V. A. Kozlov, V. V. Kozlovskii, A. N. Titkov, M. S. Dunaevskii, A. K. Kryzhanovskii
The formation of β-FeSi2 precipitates in microcrystalline Si
E. I. Terukov, O. I. Kon’kov, V. Kh. Kudoyarova, O. B. Gusev, V. Yu. Davydov, G. N. Mosina
Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures
E. I. Terukov, O. B. Gusev, O. I. Kon’kov, Yu. K. Undalov, M. Stutzmann, A. Janotta, H. Mell, J. P. Kleider
Photoluminescence and excitation features of Nd3+ ions in (La0.97Nd0.03)2S3 · 2Ga2O3 glasses
A. A. Babaev, E. M. Zobov, V. V. Sokolov, A. Kh. Sharapudinova
Conductivity and structure of Er-doped amorphous hydrogenated silicon films
O. I. Kon’kov, E. I. Terukov, L. S. Granitsina
Nature of impurity centers of rare-earth metals and self-organization processes in a-Si:H films
M. M. Mezdrogina, I. N. Trapeznikova, E. I. Terukov, F. S. Nasredinov, N. P. Seregin, P. P. Seregin
The influence of sinks of intrinsic point defects on phosphorus diffusion in Si
O. V. Aleksandrov
Possibility of observing Bose-Einstein condensation in semiconductors via Mössbauer spectroscopy using the 67Zn isotope
S. A. Nemov, N. P. Seregin, S. M. Irkaev
Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)
A. A. Lebedev, V. V. Kozlovski, N. B. Strokan, D. V. Davydov, A. M. Ivanov, A. M. Strel’chuk, R. Yakimova
Kinetic theory of negative magnetoresistance as an alternative to weak localization in semiconductors
V. É. Kaminskii
The influence of adsorbate on the work function and penetrability of the surface potential barrier of GaAs(110) single crystal
Yu. I. Asalkhanov, V. N. Abarykov
ZnMnSe/ZnSSe Type-II semimagnetic superlattices: Growth and magnetoluminescence properties
A. A. Toropov, A. V. Lebedev, S. V. Sorokin, D. D. Solnyshkov, S. V. Ivanov, P. S. Kop’ev, I. A. Buyanova, W. M. Chen, B. Monemar
Ordering of nanostructures in a Si/Ge0.3Si0.7/Ge system during molecular beam epitaxy
G. E. Cirlin, V. A. Egorov, L. V. Sokolov, P. Werner
Effect of fullerene on the photogeneration and transport of charge carriers in triphenylamine-containing polyimides
E. L. Aleksandrova
Flattening of dynamic dielectric phase grating and single-mode lasing under the conditions of transverse oscillations of luminous flux
A. P. Astakhova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, Yu. P. Yakovlev
High power single-mode (λ=1.3–1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures
A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Yu. A. Ryaboshtan, I. S. Tarasov
High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates
S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, A. P. Vasil’ev, E. S. Semenova, V. M. Ustinov, M. M. Kulagina, E. V. Nikitina, I. P. Soshnikov, Yu. M. Shernyakov, D. A. Livshits, N. V. Kryjanovskaya, D. S. Sizov, M. V. Maksimov, A. F. Tsatsul’nikov, N. N. Ledentsov, D. Bimberg, Zh. I. Alferov