Ausgabe 2/2001
Inhalt (25 Artikel)
Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure
I. E. Tyschenko, K. S. Zhuravlev, E. N. Vandyshev, A. Misiuk, R. A. Yankov, L. Rebohle, W. Skorupa
Quasi-local impurity states in uniaxially compressed p-type Ge
A. A. Abramov, V. N. Tulupenko, D. A. Firsov
The effect of stress fields produced by growth defects on the dielectric photoresponse of Cd1−x ZnxTe crystals
I. A. Klimenko, V. K. Komar’, V. P. Migal’, D. P. Nalivaiko
Nickel impurity excitons and photoinduced lattice distortion in ZnSe1−y Sy:Ni and Zn1−x CdxSe:Ni solid solutions
V. I. Sokolov, V. N. Starovoitova
The edge ultraviolet luminescence of GaN:Zn films activated in a nitrogen plasma
A. N. Georgobiani, A. N. Gruzintsev, U. A. Aminov, M. O. Vorob’ev, I. I. Khodos
Reflection spectra of doped bismuth-antimony crystals in the far-infrared region of the spectrum
V. M. Grabov, N. P. Stepanov
The effect of high-temperature epitaxial SiC layer growth on the structure of porous silicon carbide
N. S. Savkina, V. V. Ratnikov, V. B. Shuman
Hopping transport in doped (Pb0.78Sn0.22)1−x InxTe solid solutions
Yu. I. Ravich, S. A. Nemov
The spread of cross section for electron capture by a trap with a discrete energy level in γ-La2S3 crystals
E. M. Zobov, M. A. Rizakhanov
Photoluminescence of CuGaTeAs and CuGaSnGa complexes in n-GaAs under resonance polarized excitation
N. S. Averkiev, A. A. Gutkin, V. E. Sedov
Electrical conductivity of n-InSb films in strong electric fields
Yu. A. Nikol’skii, S. E. Zyuzin
Surface gettering of background impurities and defects in GaAs wafers
L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, A. V. Kamanin, D. S. Poloskin, N. M. Shmidt
Mechanism of reverse current in the Al/p-InP schottky diodes
P. A. Pipinys, A. K. Rimeika, V. A. Lapeika, A. V. Pipiniene
Quasi-static ion currents in thin insulating films of metal-insulator-semiconductor structures and the distribution of ions in the films
S. G. Dmitriev, Yu. V. Markin
Simulation of hysteresis in a metal-ferroelectric-semiconductor structure
L. S. Berman
Investigation of a change in the chemical composition of the surface of CdxHg1−x Te samples as a result of treatment by N2O and H2 gases activated in a high-frequency discharge
V. V. Vasil’ev, T. I. Zakhar’yash, V. G. Kesler, I. O. Parm, A. P. Solov’ev
Tunneling via impurity states related to the X valley in a thin AlAs barrier
Yu. N. Khanin, K. S. Novoselov, E. E. Vdovin
Spectra of the field and current oscillations in superlattices exposed to terahertz laser radiation
Yu. A. Romanov, Yu. Yu. Romanova
Investigation of the SiC/(SiC)1−x (AlN)x heterostructures by the method of capacitance-voltage characteristics
M. K. Kurbanov, B. A. Bilalov, Sh. A. Nurmagomedov, G. K. Safaraliev
Electron localization and bloch oscillations in quantum-dot superlattices under a constant electric field
I. A. Dmitriev, R. A. Suris
Optical properties of amorphous carbon films deposited by magnetron sputtering of graphite
V. I. Ivanov-Omskii, A. V. Tolmatchev, S. G. Yastrebov
Contrast enhancement in image transfer via interaction of UV radiation with inorganic photoresist films
N. A. Kaliteevskaya, R. P. Seisyan
Investigation of surface morphology of copper-modified amorphous carbon films
T. K. Zvonareva, V. I. Ivanov-Omskii, S. G. Yastrebov, A. O. Golubok, O. M. Gorbenko, V. V. Rozanov
Optical study of InP quantum dots
D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, Z. N. Sokolova, I. S. Tarasov
High-power high-voltage bipolar transistors based on complex semiconductor structures
M. Yu. Volokobinskii, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush, I. V. Falina, A. S. Yastrebov