Ausgabe 2/2016
Inhalt (26 Artikel)
On the theory of the two-photon linear photovoltaic effect in n-GaP
V. R. Rasulov, R. Ya. Rasulov
Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4) x alloys
I. V. Bodnar, I. A. Victorov, M. A. Jaafar, S. A. Pauliukavets
Photoluminescence properties of thallium-containing GeSe2 and GeSe3 vitreous semiconductors
A. A. Babaev
On the surface photovoltaic effect in a multivalley semiconductor in an external magnetic field
V. R. Rasulov, R. Ya. Rasulov
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy
A. V. Dunaev, D. B. Murin, S. A. Pivovarenok
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface
A. V. Bakulin, S. E. Kulkova
On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin
S. V. Ryabtsev, O. A. Chuvenkova, S. V. Kannykin, A. E. Popov, N. S. Ryabtseva, S. S. Voischev, S. Yu. Turishchev, E. P. Domashevskaya
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
R. A. Khabibullin, A. E. Yachmenev, D. V. Lavrukhin, D. S. Ponomarev, A. S. Bugayev, P. P. Maltsev
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures
I. A. Aleksandrov, K. S. Zhuravlev, V. G. Mansurov
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
G. B. Galiev, E. A. Klimov, M. M. Grekhov, S. S. Pushkarev, D. V. Lavrukhin, P. P. Maltsev
GaAs structures with a gate dielectric based on aluminum-oxide layers
I. L. Kalentyeva, O. V. Vikhrova, A. V. Zdoroveyshchev, Yu. A. Danilov, A. V. Kudrin
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates
K. D. Mynbaev, S. V. Zablotsky, A. V. Shilyaev, N. L. Bazhenov, M. V. Yakushev, D. V. Marin, V. S. Varavin, S. A. Dvoretsky
Composition and optical properties of amorphous a-SiO x :H films with silicon nanoclusters
V. A. Terekhov, E. I. Terukov, Yu. K. Undalov, E. V. Parinova, D. E. Spirin, P. V. Seredin, D. A. Minakov, E. P. Domashevskaya
Effect of transverse electric field on the longitudinal current–voltage characteristic of graphene superlattice
S. V. Kryuchkov, E. I. Kukhar’
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds
D. V. Gromov, P. P. Maltsev, S. A. Polevich
Pb1–x Eu x Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm
D. A. Pashkeev, Yu. G. Selivanov, E. G. Chizhevskii, I. I. Zasavitskiy
Field-effect transistor with 2D carrier systems in the gate and channel
V. G. Popov
Si:Si LEDs with room-temperature dislocation-related luminescence
N. A. Sobolev, A. E. Kalyadin, M. V. Konovalov, P. N. Aruev, V. V. Zabrodskiy, E. I. Shek, K. F. Shtel’makh, A. N. Mikhaylov, D. I. Tetel’baum
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
V. G. Tikhomirov, V. E. Zemlyakov, V. V. Volkov, Ya. M. Parnes, V. N. Vyuginov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsulnikov, N. A. Cherkashin, M. N. Mizerov, V. M. Ustinov
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
A. E. Kalyadin, N. A. Sobolev, A. M. Strel’chuk, P. N. Aruev, V. V. Zabrodskiy, E. I. Shek
Electroluminescence properties of LEDs based on electron-irradiated p-Si
N. A. Sobolev, K. F. Shtel’makh, A. E. Kalyadin, P. N. Aruev, V. V. Zabrodskiy, E. I. Shek, D. Yang
Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon
A. V. Sachenko, Yu. V. Kryuchenko, V. P. Kostylyov, I. O. Sokolovskyi, A. S. Abramov, A. V. Bobyl, I. E. Panaiotti, E. I. Terukov
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
D. N. Lobanov, A. V. Novikov, B. A. Andreev, P. A. Bushuykin, P. A. Yunin, E. V. Skorohodov, L. V. Krasilnikova
Light-emitting nanocomposites on the basis of ZnS:Cu deposited into porous anodic Al2O3 matrices
R. G. Valeev, D. I. Petukhov, A. I. Chukavin, A. N. Beltiukov
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
D. S. Korolev, A. N. Mikhaylov, A. I. Belov, V. K. Vasiliev, D. V. Guseinov, E. V. Okulich, A. A. Shemukhin, S. I. Surodin, D. E. Nikolitchev, A. V. Nezhdanov, A. V. Pirogov, D. A. Pavlov, D. I. Tetelbaum
Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries
E. V. Astrova, G. V. Li, A. M. Rumyantsev, V. V. Zhdanov