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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 2/2019

19.11.2018

Sputtered cobalt doped CuO nano-structured thin films for photoconductive sensors

verfasst von: Wael Z. Tawfik, Zaki S. Khalifa, M. Sh. Abdel-wahab, Ahmed H. Hammad

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2019

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Abstract

Pure and cobalt (Co) doped CuO thin films have been deposited by DC and AC reactive magnetron sputtering technique. The doping ratio has been controlled by the RF power of the AC sputtering unit. The sputtering power ranges from 0 to 50 W. The crystal structure of the films has been identified by X-ray diffraction. One of the peaks has been shifted toward the high diffraction angle. Energy dispersive analysis shows cationic deficiency of the pure and doped samples. Morphology of the films has been investigated by atomic force microscopy. Film roughness decrease with the increase of sputtering power. Spectrophotometry studies reveal that films darken with the increase of sputtering power. The current–voltage curves show Ohmic contacts and an enhancement in the conductivity with the increase of Co concentrations. Photoresponse measurements have shown that the film doped at 50 W is the best photodetector sensor.
Vorheriger Artikel Influence of Sm and Nb on the structural, electric, magnetic and magneto-electric properties of BaTiO3-Li0.5Fe2.5O4 composite ceramics grown by the conventional solid state technique
Nächster Artikel Improved thermoelectric properties of n-type Bi2Te3 alloy deriving from two-phased heterostructure by the reduction of CuI with Sn

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Metadaten
Titel
Sputtered cobalt doped CuO nano-structured thin films for photoconductive sensors
verfasst von
Wael Z. Tawfik
Zaki S. Khalifa
M. Sh. Abdel-wahab
Ahmed H. Hammad
Publikationsdatum
19.11.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 2/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-0395-0

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