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Erschienen in:
01.04.2013 | Original Paper
Structural and electrical properties of chemical solution deposited (Bi0.9Tb0.1)(Fe0.975 TM 0.025)O3±δ (TM = Ni, Mn and Ti) thin films
Erschienen in: Journal of Sol-Gel Science and Technology | Ausgabe 1/2013
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Abstract
Effects of Tb and transition metal (TM = Ni, Mn and Ti) ions co-doping on the structural, electrical and ferroelectric properties of the BiFeO3 thin films prepared by using a chemical solution deposition method were reported. From X-ray diffraction and Raman scattering analyses, distorted rhombohedral perovskite structures were observed for all thin films. Improved electrical and ferroelectric properties were observed for the co-doped thin films. Among the thin films, the lowest leakage current density of 2.67 × 10−6 A/cm2 (at 100 kV/cm), large remnant polarization (2P
r
) of 82.2 μC/cm2 and low coercive field (2Ec) of 680 kV/cm (at 1,036 kV/cm) were measured for the (Tb, Mn) co-doped thin film.