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07.03.2022 | Electronic materials

Suitability of thin-GaN for AlGaN/GaN HEMT material and device

verfasst von: Kapil Narang, Vikash K. Singh, Akhilesh Pandey, Ruby Khan, Rajesh K. Bag, D. S. Rawal, M. V. G. Padmavati, Renu Tyagi, Rajendra Singh

Erschienen in: Journal of Materials Science | Ausgabe 10/2022

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Abstract

In this study, we report about the suitability of thin-GaN (~ 200 nm) for AlGaN/GaN HEMT (High Electron Mobility Transistor) material and device. These HEMT structures are grown on SiC substrate using MOVPE (Metal Organic Vapor Phase Epitaxy). The morphological, structural, and electrical characteristics of two kinds of grown HEMT structures are studied. The HEMT structures with thin-GaN epi-layer, grown by using different AlN NL (Nucleation Layer) resulted in dislocation density of thin-GaN epi-layer comparable to ~ 2.2 µm thick GaN epi-layer used in conventional-GaN HEMT structure. X-ray Rocking Curve broadening along the symmetric (002) and skew-symmetric (102) planes for conventional-GaN/optimized thin-GaN epi-layer of HEMT structure are found to be ~ 145/135 arc-sec and ~ 350/310 arc-sec respectively. Material characteristics such as structural quality, surface morphology, and 2DEG (Two-Dimensional Electron Gas) properties of the optimized thin-GaN HEMT structure are comparable with conventional-GaN HEMT structure. HEMT devices are fabricated on optimized thin-GaN and conventional-GaN based HEMT structures. The important device attributes viz. drain-source saturation current at zero gate bias (~ 1 A·mm⁻¹), transconductance (~ 210 mS·mm⁻¹), and pinch-off voltage (~ −5 Volt) measured from DC characteristics are found to be comparable in both the devices. The mesa leakage is significantly improved in thin-GaN compared to conventional-GaN HEMT device to ~ 10 nA·mm⁻¹ from ~ 350 nA·mm⁻¹.

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Titel: Suitability of thin-GaN for AlGaN/GaN HEMT material and device
verfasst von: Kapil Narang
Vikash K. Singh
Akhilesh Pandey
Ruby Khan
Rajesh K. Bag
D. S. Rawal
M. V. G. Padmavati
Renu Tyagi
Rajendra Singh
Publikationsdatum: 07.03.2022
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 10/2022
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-022-07017-x

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