Synthesis and characterization of high quality {100} diamond single crystal

Non-destructive characterization of diamond plate can provide abundant information. Consequently, it will help improve the growth technique. In this paper, unintentionally doped {100} diamond single crystal (type Ib) was synthesized by the temperature gradient growth (TGG) method under high pressure (~6.5 GPa) and high temperature (~1500 °C) condition. The crystal morphology was observed by confocal laser scanning microscope (CLSM). The result indicated there was a pit on diamond surface. UV/Vis transmission measurement indicated the maximum transmittance of our sample was about 9% lower than that of theoretical value. Fourier-transformation infrared spectroscopy (FTIR) measurement confirmed that the nitrogen concentration was about 53 ppm. High resolution X-Ray diffractometer (HRXRD) was employed to evaluated the crystalline quality, and result showed that the full width of half maximum (FWHM) at (400) and (111) rocking curves were 56.9′′, 23.7′′, respectively, which revealed the good crystalline quality. In addition, the diffraction peak of (400) lattice plane exhibited an increase trend with the X-ray beam position, showing the (100) lattice surface was convex bended.