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Erschienen in:
01.10.2007
Temperature dependence of the lowest-direct-bandgap energy in the ternary chalcopyrite semiconductor AgInSe2
Erschienen in: Journal of Materials Science: Materials in Electronics | Sonderheft 1/2007
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Abstract
Photoreflectance spectra have been measured on the ternary chalcopyrite semiconductor AgInSe2 at T = 15–300 K. The direct-bandgap energies, E
0A, E
0B, and E
0C, of AgInSe2 show unusual temperature dependence at low temperatures. The resultant temperature coefficients \({\partial E_{0\alpha}/\partial T}\)
\(({\alpha=\hbox{A, B, C}})\) are positive at T below ∼100 K and negative above ∼100 K. These results are successfully explained by taking into account the negative lattice thermal expansion at low temperatures. The spin–orbit and crystal-field parameters Δso and Δcf are also found to show small temperature variations.