Temperature dependence of THz emission and junction electric field of GaAs–AlGaAs modulation-doped heterostructures with different i-AlGaAs spacer layer thicknesses

Photocarrier dynamics in GaAs/AlGaAs modulation-doped heterostructures (MDH) having i-AlGaAs spacer layers of different thicknesses were investigated using temperature-dependent terahertz time-domain spectroscopy (THz-TDS) and photoreflectance spectroscopy. In particular, results are discussed in the framework of the temperature dependence of the heterojunction electric field and photocarrier velocity for two i-AlGaAs spacer layer thickness values. The junction electric field, THz emission intensity and bandwidth of the MDH samples all decrease as temperature decreases. In contrast, the THz emission intensity and bandwidth of a reference bulk undoped GaAs does not significantly vary with temperature. These results imply that THz emission of MDH’s originates primarily from carrier drift due to the GaAs/AlGaAs junction electric field. A general decrease in the THz emission bandwidth of the MDH’s is attributed to a decrease in carrier velocity at lower temperatures, presumably due to the weaker electric field. Moreover, the MDH sample with thinner spacer layer exhibited a higher junction electric field. This work demonstrates the study of temperature-dependent photocarrier transport and junction electric field measurements. The results may provide useful insights in the design of MDH-based devices.