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Erschienen in:
01.09.2011
Temperature-stable and low loss Fe-containing dielectrics in BaO-Ln2O3-Fe2O3-Ta2O5 system
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2011
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Abstract
Polycrystalline samples of Ba4Ln2Fe2Ta8O30 (Ln = La and Nd) were prepared by a high temperature solid-state reaction technique. The formation, structure, dielectric and ferroelectric properties of the compounds were studied. Both compounds are found to be paraelectrics with filled tetragonal tungsten bronze (TB) structure at room temperature. Dielectric measurements revealed that the present ceramics have exceptional temperature stability, a relatively small temperature coefficient of dielectric constant (τ
ε
) of −25 and −58 ppm/°C, with a high dielectric constant of 118 and 96 together with a low dielectric loss of 1.2 × 10−3 and 2.8 × 10−3 (at 1 MHz) for Ba4La2Fe2Ta8O30 and Ba4Nd2Fe2Ta8O30, respectively. The measured dielectric properties indicate that both materials are possible candidates for the fabrication of discrete multilayer capacitors in microelectronic technology.