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Erschienen in: Journal of Materials Science: Materials in Electronics 18/2020

12.08.2020

The doping effect of Al2O3 on the high-frequency electrical and magnetic properties of CoFeB soft magnetic thin films deposited on Si substrates using RF magnetron sputtering technique

verfasst von: Muhammad Arif, Xiang Zhang, Muhammad Amir, Ghulam Muhammad Mustafa, Er Liu, Feng Xu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 18/2020

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Abstract

Soft magnetic thin films have drawn tremendous interests in high-frequency spintronics applications. Here we demonstrate the doping effect of Al2O3 on the high-frequency electrical and magnetic properties of CoFeB soft magnetic thin films by systematically investigating the dependences of exchange constant A, saturation magnetization Ms and damping constant α on the Al2O3 doping concentration. In contrast to the decreased exchange constant due to the non-magnetic doping, the electrical resistivity of CoFeB thin films is found to be increased by the doping of Al2O3, indicating the suppression of eddy current loss in high-frequency application. Moreover, we found that the product of Ms and α which determines the critical switching current density of CoFeB thin films first increases and then decreases with the increasing doping concentration of Al2O3. The presented results demonstrated that high doping concentration of Al2O3 in CoFeB thin films is beneficial for the high-frequency spintronics applications.

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Metadaten
Titel
The doping effect of Al2O3 on the high-frequency electrical and magnetic properties of CoFeB soft magnetic thin films deposited on Si substrates using RF magnetron sputtering technique
verfasst von
Muhammad Arif
Xiang Zhang
Muhammad Amir
Ghulam Muhammad Mustafa
Er Liu
Feng Xu
Publikationsdatum
12.08.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 18/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-04117-9

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