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Erschienen in:
03.07.2017
The effect of seed layer on optical and structural characteristics of ZnO nanorod arrays deposited by CBD method
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 20/2017
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Abstract
ZnO nanorods were grown on p-type silicon by chemical bath deposition technique (CBD). ZnO nanorod arrays exhibited antireflective properties on silicon substrates. The ZnO nanorods structure, roughness characteristics of the film and phase were studied using field-emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) while the optical properties were investigated by photoluminescence (PL) and reflectance spectrometery. XRD pattern indicated a sharp peak from (002) planes of ZnO. FESEM images indicated that the average diameter and length of the ZnO nanorods were 61.27 nm and 1.22 µm, respectively. Photoluminescence spectra exhibited a strong UV peak due to near-band-edge (NBE) emission. ZnO layer can reduce the reflection of incident light from silicon surface, thus it can be assumed an antireflective layer on Si substrates. Low running cost, cheap materials and compatibility of industrial process make this structures attractive for industrial optoelectronic devices.