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Erschienen in: Journal of Nanoparticle Research 3/2014

01.03.2014 | Research Paper

The effect of substrate distance to evaporation source on morphology of ZnO:In nanorods fabricated by means of a vapor transfer route and the study of their optical and electrical properties

verfasst von: Vahid Ghafouri, Mohsen Shariati, Akbar Ebrahimzad

Erschienen in: Journal of Nanoparticle Research | Ausgabe 3/2014

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Abstract

High-quality polycrystalline and single crystalline Indium-doped ZnO (ZnO:In) nanorods (NRs) have been synthesized on Si (100) substrates via a vapor transfer route in an oxygen-rich tube furnace. The morphology of the nanostructures and their distribution on the surface is highly related to distance between the substrate and evaporation sources. The morphology can be adjusted from micro-porous film to the vertically aligned hexagonal NRs by this distance. The diameter of the grown NRs varies between 50 and 200 nm, and their length mostly changes from 1 to 3 mm. EDS analysis indicated the presence of zinc, oxygen, and indium in the structures. FTIR measurements confirmed the existence of Zn–O and In–O bands in ZnO:In NRs. X-ray diffractions and SAED patterns showed that the vertically aligned hexagonal NRs have a preferential orientation along the (002) direction. Room-temperature photoluminescence (PL) spectra of NRs are dominated by a green band emission between 420 and 700 nm. The peak of the green emission has shifted in different samples, which is probably due to indium impurity. The results of the electrical transport measurement of the NRs showed that the amount of In impurity is effective in the increase of samples’ conductivity.

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Metadaten
Titel
The effect of substrate distance to evaporation source on morphology of ZnO:In nanorods fabricated by means of a vapor transfer route and the study of their optical and electrical properties
verfasst von
Vahid Ghafouri
Mohsen Shariati
Akbar Ebrahimzad
Publikationsdatum
01.03.2014
Verlag
Springer Netherlands
Erschienen in
Journal of Nanoparticle Research / Ausgabe 3/2014
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI
https://doi.org/10.1007/s11051-014-2309-2

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