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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 20/2021

09.09.2021

The effect of Zn concentration on the structural and optical properties of Cd1-xZnxS nanostructured thin films

verfasst von: M. Isik, M. Terlemezoglu, S. Isik, K. Erturk, N. M. Gasanly

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 20/2021

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Abstract

The structural and optical properties of electrodeposited Cd1-xZnxS nanostructured thin films were investigated in the present paper for compositions of x = 0, 0.03, 0.06 and 0.09. X-ray diffraction patterns of the deposited thin films consisted of diffraction peaks related to cubic crystal lattice. The atomic compositional ratios were determined by performing energy dispersive spectroscopy measurements. Scanning electron microscopy images indicated that deposited thin films have nanostructured forms. Raman spectra of the Cd1-xZnxS thin films exhibited two vibrational modes associated with longitudinal optical mode and its first overtone. Transmission measurements were performed on the deposited thin films to get their band gap energies. It was seen from the analyses of absorption coefficient that band gap energy of Cd1-xZnxS thin films increases almost linearly from 2.40 to 2.51 eV as the composition was increased from x = 0 to x = 0.09.
Vorheriger Artikel Influence of thickness of the sputtered diamond-like carbon (DLC) on electronic and dielectric parameters of the Au/DLC/n-Si heterojunction
Nächster Artikel Cost-effective aegle marmelos extract-assisted synthesis of ZnFe2O4:Cu2+ NPs: photocatalytic and electrochemical sensor applications

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Metadaten
Titel
The effect of Zn concentration on the structural and optical properties of Cd1-xZnxS nanostructured thin films
verfasst von
M. Isik
M. Terlemezoglu
S. Isik
K. Erturk
N. M. Gasanly
Publikationsdatum
09.09.2021
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 20/2021
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-06980-6

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