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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 14/2020

09.06.2020

The influence of low indium composition ratio on sol–gel solution-deposited amorphous zinc oxide thin film transistors

verfasst von: Serif Ruzgar, Yasemin Caglar, Mujdat Caglar

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 14/2020

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Abstract

In this work, we examined the influence of In doping on the morphological and structural characteristics of ZnO active layers grown by the spin coating and the electrical performance of ZnO-based thin film transistors. XRD results indicated that the active layers were amorphous due to the absence of any sharp peaks. XPS analysis was carried out to determine indium amounts as an atomic percentage in ZnO and oxidation state of In. AFM images indicated that the roughness of the active layers decreased with increasing indium concentration in ZnO. The indium doping has dramatically improved the electrical parameters of ZnO-based transistors. The field-effect mobility of undoped TFT increased ~ 157 times by adding %3 In content. The highest field-effect mobility (μsat) of 12.9 cm2V−1 s−1 was obtained for %3 In-doped ZnO TFT (IZO3). Also IZO3 has a 6.96 V threshold voltage (Vth), 106Ion/Ioff ratio, 1.98 V/dec subthreshold slope (SS), and a high on-current of 4.6 mA. We ascribed the performance enhancement of devices with In doping due to increasing carrier concentration of channel. These results show that the low concentration of indium incorporation is very crucial to change the morphological properties of ZnO active layers and to obtain high-performance solution-processed TFTs.
Vorheriger Artikel Impact of weak ferromagnetism on the magnetocaloric properties of A-site-doped PrMnO3 compound
Nächster Artikel Research of the shielding effect and radiation resistance of composite CuBi2O4 films as well as their practical applications

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Metadaten
Titel
The influence of low indium composition ratio on sol–gel solution-deposited amorphous zinc oxide thin film transistors
verfasst von
Serif Ruzgar
Yasemin Caglar
Mujdat Caglar
Publikationsdatum
09.06.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 14/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-03723-x

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