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Erschienen in: Journal of Materials Science: Materials in Electronics 1/2016

09.09.2015

The microstructure, stoichiometric ratio and room temperature ferromagnetic properties of V-doped ZnO films deposited at different substrate temperatures

verfasst von: Jun Wu, Taotao Li, Ting Qi, Bailin Zhu, Wenjun Wang, Ding Wei, Changsheng Xie

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2016

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Abstract

The vanadium doped ZnO (ZnO:V) films were deposited on glass substrate by radio frequency (r.f.) magnetron sputtering at different substrate temperatures. The results show that the substrate temperature significantly influences the morphology, crystallinity, stoichiometric ratio and concentration of oxygen in different chemical states of the ZnO:V films. The film deposited at 450 °C possesses good crystallinity, strong (002) orientation and near-regular hexagonal prismatic particles. The VSM results demonstrate that all the ZnO:V films exhibit room temperature ferromagnetic behavior and it is also the ZnO:V film deposited at 450 °C that shows the highest saturation moment (Ms) of about 46.12 emu/cm3. The XPS results indicate that V4+ and V5+ ions coexist in the ZnO:V films and are mainly responsible for the room temperature ferromagnetic behavior.

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Metadaten
Titel
The microstructure, stoichiometric ratio and room temperature ferromagnetic properties of V-doped ZnO films deposited at different substrate temperatures
verfasst von
Jun Wu
Taotao Li
Ting Qi
Bailin Zhu
Wenjun Wang
Ding Wei
Changsheng Xie
Publikationsdatum
09.09.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 1/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3732-6

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