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Erschienen in:
01.02.2015
The role of using seed-layer assisted electrodeposition method on the growth and the photovoltaic properties of p-Cu2O/n-Si heterojunctions
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2015
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Abstract
A simple seed-layer assisted electro-deposition SLAE route has been successfully used to prepare a Cu2O film with a significant improvement in the crystalline quality, compactness and surface texture. This improvement was confirmed by studying the photo-luminescence emission properties and Raman spectroscopy of the Cu2O films grown with and without the SLAE route. The hall measurements reveal the enhancement in the hole mobility from 3.8 cm2/V s for the Cu2O films grown without using the SLAE route compared to 45 cm2/V s for the films grown by using the SLAE route. A detailed analysis of the J–V characteristics curve of the p-Cu2O/n-Si heterojunctions was performed. The dark J–V curves reveal the formation of p–n junction behavior. The photovoltaic parameters of p-Cu2O/n-Si heterojunctions exhibit an improvement in the p-Cu2O/n-Si solar cell efficiency from 0.05 to 0.31 % due to the adoption of the SLAE route.