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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 4/2019

02.01.2019

Thermal stability improvement and crystallization behavior of Ag doped Ge2Sb2Te5 phase change materials

verfasst von: Palwinder Singh, A. P. Singh, Anup Thakur

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 4/2019

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Abstract

Ge2Sb2Te5 is a potential candidate for various technological applications because of its splendid set of properties. (Ge2Sb2Te5)100−xAgx (x = 0 and 3) bulk alloys and thin films are prepared using melt quenching and thermal evaporation method, respectively. The structural analysis of as-deposited and annealed (at 150 and 160 °C) thin films is accomplished using X-ray diffraction. Phase transition is observed in thin films annealed at 160 °C. The thermal behavior of the samples is investigated using differential thermal analysis (DTA). Crystallization temperature of the bulk alloys is obtained from DTA curve analysis. Activation energy of crystallization has been evaluated using different thermal kinetic approaches: Kissinger, Moynihan and Augis and Benett. It is found that with Ag doping, the crystallization temperature and activation energy of crystallization increased which enhanced the thermal stability of phase change material.
Vorheriger Artikel Fabrication of high-temperature-resistant bondline based on multilayer core–shell hybrid microspheres for power devices
Nächster Artikel Raman spectroscopic, infrared spectra and microwave dielectric properties in the (ZrTi)1−x(Al1/2Nb1/2)2xO4 ceramics

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Metadaten
Titel
Thermal stability improvement and crystallization behavior of Ag doped Ge2Sb2Te5 phase change materials
verfasst von
Palwinder Singh
A. P. Singh
Anup Thakur
Publikationsdatum
02.01.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 4/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-00638-6

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