Anzeige
Erschienen in:
01.09.2013
Thickness-dependent electrical properties of sol–gel derived Pb(Zr0.52Ti0.48)O3 thick films using PbTiO3 buffer layers
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2013
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
Pb(Zr0.52Ti0.48)O3 (PZT) thick films, with thickness up to 4 μm, using PbTiO3 (PT) buffer layers were successfully prepared on silicon-based substrates by a sol–gel method. Thermal analysis (thermogravimetric–differential thermal analysis) of PT and PZT sols were used to determine the pyrolysis and annealing temperatures. X-ray diffraction results show that the PZT/PT composite thick films possess perovskite structure and the dominant crystalline orientation changes from (100) to (110) with increasing the film thickness. Furthermore, the composite thick films exhibit thickness-dependent ferroelectric and dielectric properties, i.e., the coercive field decreases while dielectric constant increases as the thickness increases. Theoretical analysis shows that the thickness-dependent electrical properties are mainly attributed to the low dielectric constant of PT buffer layer and the relaxation of internal stress in PZT films.