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Erschienen in:
01.01.2013
Varistor characteristics of vanadium oxide-doped zinc oxide ceramics modified with bismuth oxide
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2013
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Abstract
The effect of Bi2O3 on microstructure, electrical properties, dielectric characteristics, and aging behavior vanadium oxide-doped zinc oxide varistor ceramics was systematically investigated. Analysis of the phase indicated that the ceramics modified with Bi2O3 consisted of ZnO grain as a main phase and a few secondary phases such as Zn3(VO4)2, ZnV2O4, BiVO4, V2O5, and Mn-rich phase. The average grain size increased from 5.6 to 7.2 μm and the sintered density decreased in the range of 5.51–5.37 g/cm3 up to 0.05 mol%, whereas a further addition increased it to 5.40 g/cm3 at 0.25 mol%. The breakdown field decreased from 4,874 to 2,205 V/cm with an increase in the amount of Bi2O3. The ceramics added with 0.025 mol% Bi2O3 were characterized by a surprisingly high nonlinear coefficient (60) and very low leakage current density (20 μA/cm2). Bi atoms in the bulk acted as a donor to increase the electron concentration with an increase in the amount of Bi2O3.