Anzeige
Erschienen in:
01.01.2013
Stress dependent properties of Ga-doped ZnO thin films prepared by magnetron sputtering
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2013
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
Ga doped ZnO films have been prepared by radio frequency magnetron sputtering at room temperature. The (002) preferential orientation is observed for all the films. In plane lattice parameters of the films are obtained by X-ray diffraction θ–2θ scan with the samples tilted 61.63°. Intrinsic compressive stress is observed parallel to the film surface, varying from 410 to 3,000 MPa. Electrical properties of the films show a great dependence on the stress. Carrier concentration and mobility are both improved as the intrinsic compressive stress is reduced which is greatly affected by adjusting the deposition pressure. Therefore, the electrical resistivity is optimized to be 1.8 × 10−3 Ω·cm for the film prepared at 8.0 Pa. In addition, the optical analysis reveals that the transmittance of the films is higher than 90 %. The band gap of the films increases from 3.11 to 3.38 eV with decreasing the stress due to the increase in the carrier concentration, which is related to Burstein–Moss effect.