Achieving High-Quality ZrB₂ Film by Ti-Gettering Assisted DC Sputtering at Ambient Temperature

ZrB₂ film plays an important role in microelectronic applications owing to its extremely high-temperature stability, excellent chemical inertness and low resistivity. Unfortunately, its electrical properties are extremely sensitive to microstructure and contaminants such as oxygen in the prepared films. Conventional strategy for the fabrication of low-content oxygen ZrB₂ film requires complex ultra-high vacuum (UHV) setups. In analogy to industrial Ti-sublimation pumping, here we conceive a simple method by introducing an assisted Ti cathode sputtering in situ to trap residual gases and contaminants. This method enables high-quality ZrB₂ films with low oxygen-content, good crystallinity and minimum resistivity of 265 μΩ cm to be achieved at a modest vacuum level environment without complex UHV devices and intentional substrate heating system.