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Erschienen in:
01.04.2015
Aluminum doping property in SiC epilayers grown at high growth rate using chloride-based CVD
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 4/2015
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Abstract
The systematic study of p-doping SiC epitaxy layer was performed on 4H-SiC (0001) 4° off-axis substrates using a high growth rate planetary hot-wall chloride-based CVD system. The influence of C/Si ratio, main hydrogen flow rate and Cl/Si ratio on aluminum (Al)-doping concentration and intra wafer uniformity has been investigated. The concentration increases with the C/Si ratio and main hydrogen flow rate while decreases with the Cl/Si ratio. The doping uniformity as the embodiment of the shape of aluminum depletion profile with substrate rotation averaging is mainly affected by main hydrogen flow, and more or less unaffected by C/Si ratio and Cl/Si ratio. The main hydrogen flow rate optimizes the Al- depletion curve within reactor, resulting in an improvement of intra wafer incorporation uniformity.