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Erschienen in:
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2020 | OriginalPaper | Buchkapitel

10. Body-Bias Calibration Based Temperature Sensor

verfasst von : Martin Cochet, Ben Keller, Sylvain Clerc, Fady Abouzeid, Andreia Cathelin, Jean-Luc Autran, Philippe Roche, Borivoje Nikolić

Erschienen in: The Fourth Terminal

Verlag: Springer International Publishing

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Abstract

Temperature monitoring is critical to the operation of all SoCs, as it provides information to adjust logic timing, optimize power management, or calibrate analog circuits. The temperature information should be obtained with a fine spatial and temporal resolution, which requires low-area sensors with a fast conversion time. Digital MOS sensors offer such performance and take full advantage of process scaling; however, they often require costly two-point calibration to achieve the desired accuracy. This chapter presents a digital sensor in 28 nm FD-SOI process which takes advantage of the technology’s extended body-biasing capabilities for process compensation. Through an NMOS-only oscillator, a single regulator provides a low-noise supply and NWell biasing. The probe is complemented by an on-chip digital logic backend to compensate for non-linearities. The whole system achieves an accuracy of −1.4 ∘C/1.3 ∘C, a per-probe area of 1044 µm2, and accommodates a wide operating range (0.62–1.2 V) and satisfying power (2.0 nJ/Sa) and accuracy.

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Vorheriges Kapitel An 802.15.4 IR-UWB Transmitter SoC with Adaptive-FBB-Based Channel Selection and Programmable Pulse Shape
Nächstes Kapitel System Integration of RISC-V Processors with FD-SOI
Fußnoten
1
Further metric performances of the sensors are compiled in Table 10.3 at the end of this chapter.
 
2
Quantitatively, T r = max((T max − T min)∕2N, T rms), where [T min; T max] is the sensor’s range, N the number of output bits, and T rms the measurement repeatability.
 
3
This value can be derived in the following steps: an error in the I ref directly translates to an equal relative error in the generated supply, i.e., dI∕I = dV∕V ; then the voltage–frequency sensitivity can be estimated from simulations to 1.49 (dF∕F = 1.49 dV∕V , typical PVT corner); last, the frequency–temperature sensitivity is the metric previously seen of 0.21 ∘C/%, (dC = 21.3 dF∕F).
 
4
The proposed architecture’s operating range is limited by the exponential delay-temperature trend: for wider ranges, the change of frequency between T min and T max makes the design impractical.
 
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Metadaten
Titel
Body-Bias Calibration Based Temperature Sensor
verfasst von
Martin Cochet
Ben Keller
Sylvain Clerc
Fady Abouzeid
Andreia Cathelin
Jean-Luc Autran
Philippe Roche
Borivoje Nikolić
Copyright-Jahr
2020
Buch
The Fourth Terminal

Print ISBN: 978-3-030-39495-0

Electronic ISBN: 978-3-030-39496-7

Copyright-Jahr: 2020

DOI
https://doi.org/10.1007/978-3-030-39496-7_10

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