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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 10/2019

16.04.2019

Characterization of the die-attach process via low-temperature reduction of Cu formate in air

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2019

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Abstract

For sinter-bonding wide-bandgap power devices to Cu finished metals in air, a low-cost material, i.e., a Cu complex paste containing mechanochemically synthesized Cu(II) formate, was prepared. Characteristics of the die-attach process were analyzed with respect to the bonding conditions. Cu nanoparticles were formed in situ by the reduction of Cu(II) formate during heating for the attachment. Sinter-bonding between the nanoparticles and Cu metallization was accelerated by the exothermic heat generated by the Cu complex. As a result, high-speed bonding (1–3 min) was achieved, which prevented severe oxidation of the reduced Cu particles and Cu finish even in air. With the application of an external pressure of 20 MPa, the Cu chips were bonded in only 1 min at 225 °C with a resulting shear strength of 23 MPa. Although the pressure decreased to 13 MPa, bonding occurred within 3 min at 225 and 210 °C, with excellent shear strength exceeding 71 and 39 MPa, respectively.
Vorheriger Artikel Surface morphology, electrochemical and electrical performances of ZnO thin films sensitized with Ag nanoparticles by UV irradiation
Nächster Artikel Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure

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Literatur
1.
H.S. Chin, K.Y. Cheong, A.B. Ismail, A review on die attach materials for SiC-based high-temperature power devices. Metal. Mater. Trans. B 41, 824–832 (2010)CrossRef
2.
J.G. Bai, J. Yin, Z.Y. Zhang, G.Q. Lu, J.D. van Wyk, High-temperature operation of SiC power devices by low-temperature sintered silver die-attachment. IEEE Trans. Adv. Packag. 30, 506–510 (2007)CrossRef
3.
Lu, G.-Q., Calata, J.N., Zhang, Z., Bai, J.G. (2004). A lead-free, Low-temperature sintering die-attach technique for high-performance and high-temperature packaging, In: Proceedings of 6th IEEE CPMT Conf. on High Density Microsystem Design and Packaging and Component Failure Analysis (HDP ‘04), IEEE, Shanghai, pp. 42–46
4.
Z. Zhang, G.Q. Lu, Pressure-assisted low-temperature sintering of silver paste as an alternative die-attach solution to solder reflow. IEEE Trans. Electron. Packag. Manuf. 25, 279–283 (2002)CrossRef
5.
G. Zeng, S. McDonald, K. Nogita, Development of high-temperature solders. Microelectron. Reliab. 52, 1306–1322 (2012)CrossRef
6.
V. Chidambaram, J. Hattel, J. Hald, High-temperature lead-free solder alternatives. Microelectron. Eng. 88, 981–989 (2011)CrossRef
7.
M. Pouranvari, A. Ekrami, A.H. Kokabi, Effect of bonding temperature on microstructure development during TLP bonding of a nickel base superalloy. J. Alloys Compd. 469, 270–275 (2009)CrossRef
8.
P. Ning, T.G. Lei, F. Wang, G.-Q. Lu, K.D.T. Ngo, K. Rajashekara, A novel high-temperature planar package for SiC multichip phase-leg power module. IEEE Trans. Power Electron. 25, 2059–2067 (2010)CrossRef
9.
S.W. Yoon, M.D. Glover, K. Shiozaki, Nickel–tin transient liquid phase bonding toward high-temperature operational power electronics in electrified vehicles. IEEE Trans. Power Electron. 28, 2448–2456 (2013)CrossRef
10.
H.A. Mustain, W.D. Brown, S.S. Ang, Transient liquid phase die attach for high-temperature silicon carbide power devices. IEEE Trans. Compon. Packag. Technol. 33, 563–570 (2010)CrossRef
11.
H. Shao, A. Wu, Y. Bao, Y. Zhao, G. Zou, Microstructure characterization and mechanical behavior for Ag3Sn joint produced by foil-based TLP bonding in air atmosphere. Mater. Sci. Eng., A 680, 221–231 (2017)CrossRef
12.
A.A. Bajwa, J. Wilde, Reliability modeling of Sn–Ag transient liquid phase die-bonds for high-power SiC devices. Microelectron. Reliab. 60, 116–125 (2016)CrossRef
13.
C.H. Lee, E.B. Choi, J.-H. Lee, Characterization of novel high-speed die attachment method at 225 °C using submicrometer Ag-coated Cu particles. Scr. Mater. 150, 7–12 (2018)CrossRef
14.
S. Fu, Y. Mei, G.-Q. Lu, X. Li, G. Chen, X. Chen, Pressureless sintering of nanosilver paste at low temperature to join large area (≥ 100 mm2) power chips for electronic packaging. Mater. Lett. 128, 42–45 (2014)CrossRef
15.
X. Liu, H. Nishikawa, Low-pressure Cu-Cu bonding using in situ surface-modified microscale Cu particles for power device packaging. Scr. Mater. 120, 80–84 (2016)CrossRef
16.
Y. Jianfeng, Z. Guisheng, H. Anming, Y.N. Zhou, Preparation of PVP coated Cu NPs and the application for low-temperature bonding. J. Mater. Chem. 21, 15981–15986 (2011)CrossRef
17.
S. Kaimori, T. Nonaka, A. Mizoguchi, The development of Cu bonding wire with oxidation-resistant metal coating. IEEE Trans. Adv. Packag. 29, 227–231 (2006)CrossRef
18.
A. Yabuki, N. Arriffin, M. Yanase, Low-temperature synthesis of copper conductive film by thermal decomposition of copper–amine complexes. Thin Solid Films 519, 6530–6533 (2011)CrossRef
19.
A. Yabuki, S. Tanaka, Electrically conductive copper film prepared at low temperature by thermal decomposition of copper amine complexes with various amines. Mater. Res. Bull. 47, 4107–4111 (2012)CrossRef
20.
M. Joo, B. Lee, S. Jeong, M. Lee, Laser sintering of Cu paste film printed on polyimide substrate. Appl. Surf. Sci. 25, 521–524 (2011)CrossRef
21.
B. Lee, S. Jeong, Y. Kim, I. Jeong, K. Woo, J. Moon, Hybrid copper complex-derived conductive patterns printed on polyimide substrates. Met. Mater. Int. 18, 493–498 (2012)CrossRef
22.
M. Joo, B. Lee, S. Jeong, M. Lee, Comparative studies on thermal and laser sintering for highly conductive Cu films printable on plastic substrate. Thin Solid Films 520, 2878–2883 (2012)CrossRef
23.
Z. Zhang, C. Chen, Y. Yang, H. Zhang, D. Kim, T. Sugahara, S. Nagao, K. Suganuma, Low-temperature and pressureless sinter joining of Cu with micron/submicron Ag particle paste in air. J. Alloys Compd. 780, 435–442 (2019)CrossRef
24.
D. Stoilova, Hydrogen bonding systems in metal(II) formate dihydrates, M(HCOO)2·2H2O (M = Mg, Mn, Co, Ni, Cu, and Zn). Double matrix infrared spectroscopy. J. Mol. Struct. 798, 141–148 (2006)CrossRef
25.
M.A. Mohamed, A.K. Galwey, S.A. Halawy, Kinetic and thermodynamic studies of the nonisothermal decomposition of anhydrous copper(II) formate in different gas atmospheres. Thermochim. Acta 411, 13–20 (2004)CrossRef
26.
D.M. Bastidas, V.M.L. Iglesia, E. Cano, S. Fajardo, J.M. Bastidas, Kinetic study of formate compounds developed on copper in the presence of formic acid vapor. J. Electrochem. Soc. 155, 578–582 (2008)CrossRef
27.
V. Rosenband, A. Gany, Preparation of nickel and copper submicrometer particles by pyrolysis of their formates. J. Mater. Proc. Technol. 153–154, 1058–1061 (2004)CrossRef
28.
J. Sopousek, J. Bursik, J. Zalesak, Z. Pesina, Silver nanoparticles sintering at low temperature on a copper substrate: in situ characterization under inert atmosphere and air. J. Min. Metall. Sect. B-Metall. 48, 63–71 (2012)CrossRef
29.
S. Magdassi, M. Grouchko, O. Berezin, A. Kamyshny, Triggering the sintering of silver nanoparticles at room temperature. ACS Nano 4, 1943–1948 (2010)CrossRef
30.
A. Hu, J.Y. Guo, H. Alarifi, G. Patane, Y. Zhou, G. Compagnini, C.X. Xu, Low temperature sintering of Ag nanoparticles for flexible electronics packaging. Appl. Phys. Lett. 97, 153117 (2010)CrossRef
31.
N.-G. Park, K.M. Kim, M.G. Kang, K.S. Ryu, S.H. Chang, Y.-J. Shin, Chemical sintering of nanoparticles: a methodology for low-temperature fabrication of dye-sensitized films. Adv. Mater. 17, 2349–2353 (2005)CrossRef
32.
J. Ryu, H.-S. Kim, H.T. Hahn, Reactive sintering of copper nanoparticles using intense pulsed light for printed electronics. J. Electron. Mater. 40, 42–50 (2011)CrossRef
33.
R. Zhang, K.-S. Moon, W. Lin, C.P. Wong, Preparation of highly conductive polymer nanocomposites by low temperature sintering of silver nanoparticles. J. Mater. Chem. 20, 2018–2023 (2010)CrossRef
Metadaten
Titel
Characterization of the die-attach process via low-temperature reduction of Cu formate in air
Publikationsdatum
16.04.2019
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 10/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01317-w

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