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Erschienen in: Semiconductors 16/2019

01.12.2019 | QUANTUM WELLS AND QUANTUM DOTS

Dielectric Measurements of Polymer Composite Based on CdS Quantum Dots in Low Density Polyethylene at Microwave Frequencies

verfasst von: N. M. Ushakov, I. D. Kosobudsky

Erschienen in: Semiconductors | Ausgabe 16/2019

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Abstract

CdS nanoparticles (NPs) as quantum dots (QDs) added into low density polyethylene (LDPE) can significantly change the MW dielectric properties of the composites. Introducing into the matrix of low density polyethylene CdS QDs increase the dielectric constant of more than twice. CdS QDs with concentration of 5 wt % to 20 wt % were prepared by the method of high-speed thermal decomposition. The size of CdS nanoparticles ranged from 2 nm to 7 nm. Experimental samples based on polymer-based nanocomposite in the form of thick films with a thickness of 80 to 100 microns were prepared by thermocompression. Complex dielectric permittivity of thick film samples was measured by T/R method from 2 to 8 GHz at room temperature (25°C). For samples with 20 wt % CdS NPs size effect was found. The change of dielectric properties of polymer composite materials is associated with the size of QDs. The dielectric constant and dielectric loss increases with decreasing size of the quantum dots. It is shown that the highest mean value of the dielectric constant and dielectric loss at a frequency range of 5 GHz to 8 GHz for cadmium sulfide nanoparticles with size of 4 nm were 12 and 189 dB/m, respectively. For QDs with ones of 6 nm average dielectric constant and dielectric loss were 5.8 and 134 dB/m, respectively. The effective dielectric constant and dielectric losses in the microwave range can be changed by CdS QDs of different sizes what consequently increases the possibility of using polymer nanocomposites as core elements of the microwave band-pass filters for various purposes.

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Metadaten
Titel
Dielectric Measurements of Polymer Composite Based on CdS Quantum Dots in Low Density Polyethylene at Microwave Frequencies
verfasst von
N. M. Ushakov
I. D. Kosobudsky
Publikationsdatum
01.12.2019
Verlag
Pleiades Publishing
Erschienen in
Semiconductors / Ausgabe 16/2019
Print ISSN: 1063-7826
Elektronische ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782619120315

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