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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 5/2016

19.01.2016

Direct growth of CuO/ITO nanowires by the vapor solid oxidation method

verfasst von: Tien Dai Nguyen, Tran Chien Dang, Anh Tan Ta, Khac An Dao

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 5/2016

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Abstract

In this paper, we report the synthesis results of cupric oxide nanowires (NWs) on the indium tin oxide (ITO) substrate by vapor solid oxidation method. In our study, a Cu layer of thickness 1.4 µm was deposited on ITO thin film substrates through the direct current DC magnetron sputtering method. Cupric oxide NWs grew on ITO after annealing Cu/ITO substrates at the temperatures with range from 350 to 500 °C in air for 3–5 h. The received peak shift of Cu2O to CuO NW phase depending on annealing temperatures was conducted by X-ray diffraction. Chemical atomic elements were obtained from energy dispersive X-ray spectroscopy. The morphology of nanowires were investigated using scanning electron microsope (SEM). The SEM images indicated that the NWs with length about 3–3.5 µm and diameter about 100 nm grew vertically over large area.
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Metadaten
Titel
Direct growth of CuO/ITO nanowires by the vapor solid oxidation method
verfasst von
Tien Dai Nguyen
Tran Chien Dang
Anh Tan Ta
Khac An Dao
Publikationsdatum
19.01.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 5/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-4311-1

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