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Erschienen in:

25.06.2022

Effect of metal electrodes on the steady-state leakage current in PZT thin film capacitors

verfasst von: Yury V. Podgorny, Alexander N. Antonovich, Alexey A. Petrushin, Alexander S. Sigov, Konstantin A. Vorotilov

Erschienen in: Journal of Electroceramics | Ausgabe 1/2022

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Abstract

The ferroelectric Ir/PZT/Pt and Au/PZT/Pt capacitor structures are studied by the electron beam induced current (EBIC) technique and the steady-state current–voltage dependencies. EBIC data reveal the change in the local field at the PZT/metal interfaces caused by migration of oxygen vacancies \({V}_{o}^{**}\) under an action of applied electric field. Ir/PZT and Pt/PZT interfaces block \({V}_{o}^{**}\) movement causing their accumulation near the cathode interface. An electrons injection from the metal cathode to the PZT leads to formation of induced p–n junction. The steady-state leakage current in this case is well described by modified equation for the p-n diode, which considers an action of the counter electric field caused by electrons injection. In the case of transparent for oxygen vacancies Au/PZT cathode oxygen vacancies leave the PZT bulk and current–voltage dependence demonstrates a region of negative differential conductivity at high electric fields. The proposed p–n junction formalism can be used for engineering of PZT-based devices.

Vorheriger Artikel Effect of Co2+ substitutions on microstructure and dielectric properties of Bi1.5MgNb1.5O7 cubic pyrochlore

Nächster Artikel Tensors symmetry of crystalline nonlinear piezoelectric materials

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N. Izyumskaya, Y.I. Alivov, S.J. Cho, H. Morkoç, H. Lee, Y.S. Kang, “Processing, structure, properties, and applications of PZT thin films,” Crit. Rev. Solid State Mater. Sci. 32(3–4), Taylor and Francis Inc., pp. 111–202 (2007). https://doi.org/10.1080/10408430701707347

J.F. Scott, Ferroelectric memories (Springer, Berlin New York, 2000)CrossRef

K.A. Vorotilov, A.S. Sigov, “Ferroelectric memory,”. Phys Sol State. 54(5), 2012. https://doi.org/10.1134/S1063783412050460

D.A. Abdullaev et al., “Ferroelectric memory: state-of-the-art manufacturing and research,”. Russ. Technol. J. 8(5), 44–67 (2020). https://doi.org/10.32362/2500-316x-2020-8-5-44-67

C.B. Eom, S. Trolier-McKinstry, Thin-film piezoelectric MEMS. MRS Bull. 37(11), 1007–1017 (2012). https://doi.org/10.1557/mrs.2012.273CrossRef

T. Liu et al. “Flexible thin-film PZT ultrasonic transducers on polyimide substrates,” Sensors (Switzerland). 21(3), MDPI AG, 1–9 (2021). https://doi.org/10.3390/s21031014

Y. Zhao, X. Hao, Q. Zhang, Energy-storage properties and electrocaloric effect of Pb (1–3 x /2)LaxZr0.85Ti0.15O 3 antiferroelectric thick films. ACS Appl. Mater. Interfaces. 6(14), 11633–11639 (2014). https://doi.org/10.1021/am502415zCrossRef

N. Setter et al., “Ferroelectric thin films: Review of materials, properties, and applications,”. J Appl Phys. 100(5), (2006). https://doi.org/10.1063/1.2336999

M.M. Zhang, Z. Jia, T.L. Ren, “Effects of electrodes on the properties of sol-gel PZT based capacitors in FeRAM,” Sol. State Electron. 53(5), Pergamon, 473–477 (2009). https://doi.org/10.1016/j.sse.2009.03.005

10.

Y. Chen, P.C. McIntyre, “Effects of chemical stability of platinum/lead zirconate titanate and iridium oxide/lead zirconate titanate interfaces on ferroelectric thin film switching reliability,” Appl. Phys. Lett. 91(23), (2007). https://doi.org/10.1063/1.2822419

11.

K. Liang et al., The conductivity mechanism and an improved C-V model of ferroelectric PZT thin film. J. Appl. Phys. 117(17), 174107 (2015). https://doi.org/10.1063/1.4919431CrossRef

12.

G. Holzlechner, D. Kastner, C. Slouka, H. Hutter, J. Fleig, Oxygen vacancy redistribution in PbZr_xTi_1-xO₃ (PZT) under the influence of an electric field. Solid State Ionics 262, 625–629 (2014). https://doi.org/10.1016/j.ssi.2013.08.027CrossRef

13.

L. Pintilie, I. Vrejoiu, D. Hesse, M. Alexe, “The influence of the top-contact metal on the ferroelectric properties of epitaxial ferroelectric Pb (Zr_0.2Ti_0.8) O₃ thin films,” J. Appl. Phys. 104(11), 114101 (2008). https://doi.org/10.1063/1.3021293

14.

T.L. Ren, L.T. Zhang, L.H. Liu, Z.J. Li, Studies of a PT/PZT/PT sandwich structure for feram applications using sol-gel processing. Integr. Ferroelectr. 39(1–4), 215–222 (2001). https://doi.org/10.1080/10584580108011944CrossRef

15.

P. Zubko, D.J. Jung, J.F. Scott, “Electrical characterization of PbZr_0.4Ti_0.6O₃ capacitors,”. J. Appl. Phys. 100(11), (2006). https://doi.org/10.1063/1.2382479

16.

X. Chen, A.I. Kingon, L. Mantese, O. Auciellot, K.Y. Hsieh, Characterization of conduction in PZT thin films produced by laser ablation deposition. Integr. Ferroelectr. 3(4), 355–363 (1993). https://doi.org/10.1080/10584589308216691CrossRef

17.

J. Zhang, M.H. Tang, J. He, Doping concentration and thickness effects in ferroelectric thin films. Appl. Phys. Lett. 96(12), 122905 (2010). https://doi.org/10.1063/1.3364136CrossRef

18.

I. Stolichnov, A. Tagantsev, “Space-charge influenced-injection model for conduction in Pb(Zr_xTi_1-x)O₃ thin films,”. J. Appl. Phys. 84(6), 3216–3225 (1998). https://doi.org/10.1063/1.368888

19.

Sigov, Y. Podgorny, K. Vorotilov, A. Vishnevskiy, “Leakage currents in ferroelectric thin films,” in Phase Transit. 86(11), 1141–1151 (2013). https://doi.org/10.1080/01411594.2013.790033

20.

Y.V. Podgornyi, K.A. Vorotilov, A.S. Sigov, “Leakage currents in thin ferroelectric films,” Phys. Sol. State. 54(5), (2012). https://doi.org/10.1134/S1063783412050332

21.

Y. Podgorny, K. Vorotilov, A. Sigov, “Negative differential conductivity in thin ferroelectric films,” Appl. Phys. Lett. 105(18), (2014). https://doi.org/10.1063/1.4901317

22.

G.W. Dietz, M. Schumacher, R. Waser, S.K. Streiffer, C. Basceri, A.I. Kingon, Leakage currents in Ba_0.7Sr_0.3TiO₃ thin films for ultrahigh-density dynamic random access memories. J. Appl. Phys. 82(5), 2359–2364 (1997). https://doi.org/10.1063/1.366045CrossRef

23.

Y. Podgorny, K. Vorotilov, A. Sigov, “Estimation of steady-state leakage current in polycrystalline PZT thin films,” AIP Adv. 6(9), (2016). https://doi.org/10.1063/1.4964147

24.

Y.V. Podgornyi, K.A. Vorotilov, A.S. Sigov, “Determination of the steady state leakage current in structures with ferroelectric ceramic films,”. Phys. Sol. State. 60(3), (2018). https://doi.org/10.1134/S1063783418030253

25.

R.C. Alig, S. Bloom, Electron-hole-pair creation energies in semiconductors. Phys. Rev. Lett. 35(22), 1522–1525 (1975). https://doi.org/10.1103/PhysRevLett.35.1522CrossRef

26.

D. Abou-Ras, N. Schäfer, N. Baldaz, S. Brunken, C. Boit, Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at p-n junctions. AIP Adv. 5(7), 77191 (2015). https://doi.org/10.1063/1.4928097CrossRef

27.

N.M. Kotova, K.A. Vorotilov, D.S. Seregin, A.S. Sigov, “Role of precursors in the formation of lead zirconate titanate thin films,” Inorg. Mater. 50(6), (2014). https://doi.org/10.1134/S0020168514060107

28.

Y.S. Yang, S.J. Lee, S.H. Kim, B.G. Chae, M.S. Jang, Schottky barrier effects in the electronic conduction of sol-gel derived lead zirconate titanate thin film capacitors. J. Appl. Phys. 84(9), 5005–5011 (1998). https://doi.org/10.1063/1.368747CrossRef

29.

J.F. Scott, K. Watanabe, A.J. Hartmann, R.N. Lamb, Device models for PZT/Pt, BST/Pt, SBT/Pt, and SBT/Bi ferroelectric memories. Ferroelectrics 225(1–4), 83–90 (1999). https://doi.org/10.1080/00150199908009114CrossRef

30.

S. Takatani, K. Kushida-Abdelghafar, H. Miki, “Effect of H₂ Annealing on a Pt/PbZr_xTi_1-xO₃ Interface Studied by X-Ray Photoelectron Spectroscopy,” Japan. J. Appl. Phys. 36(Part 2, No. 4A), L435–L438, (1997). https://doi.org/10.1143/jjap.36.l435

31.

B. Akkopru-Akgun, W. Zhu, C.A. Randall, M.T. Lanagan, S. Trolier-Mckinstry, Polarity dependent DC resistance degradation and electrical breakdown in Nb doped PZT films. APL Mater. 7(12), 120901 (2019). https://doi.org/10.1063/1.5115391CrossRef

32.

T. Mihara, H. Watanabe, H. Yoshimori, C.A. Paz De Araujo, B. Melnick, L.D. McMillan, Process dependent electrical characteristics and equivalent circuit model of sol-gel based PZT capacitors. Integr. Ferroelectr. 1(2–4), 269–291 (1992). https://doi.org/10.1080/10584589208215717CrossRef

33.

N.J. Donnelly, C.A. Randall, “Pb loss in Pb(Zr,Ti)O₃ ceramics observed by in situ ionic conductivity measurements,” in J. Appl. Phys. 109(10), 104107 (2011). https://doi.org/10.1063/1.3585831

34.

A. Klein, “Interface Properties of Dielectric Oxides,” J. Am. Cer. Soc. 99(2), Blackwell Publishing Inc., pp 369–387, (2016). https://doi.org/10.1111/jace.14074

35.

Y.V. Podgornyi, K.A. Vorotilov, A.S. Sigov, Determination of the Steady State Leakage Current in Structures with Ferroelectric Ceramic Films. Phys. Solid State 60(3), 433–436 (2018). https://doi.org/10.1134/S1063783418030253CrossRef

36.

P. Muralt, Polar Oxide Thin Films for MEMS Applications. In: Schneller, T., Waser, R., Kosec, M., Payne, D. (eds) Chemical Solution Deposition of Functional Oxide Thin Films. Springer, Vienna. (2013). https://doi.org/10.1007/978-3-211-99311-8_24

Titel: Effect of metal electrodes on the steady-state leakage current in PZT thin film capacitors
verfasst von: Yury V. Podgorny
Alexander N. Antonovich
Alexey A. Petrushin
Alexander S. Sigov
Konstantin A. Vorotilov
Publikationsdatum: 25.06.2022
Verlag: Springer US
Erschienen in: Journal of Electroceramics / Ausgabe 1/2022
Print ISSN: 1385-3449
Elektronische ISSN: 1573-8663
DOI: https://doi.org/10.1007/s10832-022-00288-5