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Journal of Materials Science

Erschienen in:

03.01.2021 | Electronic materials

Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications

verfasst von: Zong-Wei Shang, Qian Xu, Guan-You He, Zhi-Wei Zheng, Chun-Hu Cheng

Erschienen in: Journal of Materials Science | Ausgabe 10/2021

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Abstract

In this study, the plasma oxidation effect in tin-oxide (SnO_x) thin film was investigated. And on this basis, we fabricated n-type thin-film transistors (TFTs) using the SnO_x thin film with the plasma oxidation by experiments. By adjusting the processing time of the oxygen plasma treatment (OPT), the optimized SnO_x TFT device exhibited an extremely high field-effect mobility of 87.6 cm² V⁻¹ s⁻¹, a desirable on-to-off current ratio of 1.9 × 10⁴ and a threshold voltage of − 0.9 V. Furthermore, we investigated the origin of the performance enhancements in the n-type SnO_x TFTs with the optimized OPT by introducing the density of states (DOS) modeling in TCAD simulation. The numerical simulation indicated that the attributes of donor-like Gaussian defect states (oxygen vacancies) were modified in overall DOS due to the plasma oxidation effect. These present results show that the SnO_x TFT treated by oxygen plasma has great promise in the future high-performance flat panel display industries.

Vorheriger Artikel Electrochemical sensing of trace level NH3: active electrode and electrolyte optimizations

Nächster Artikel Anisotropy of resistance-type strain sensing networks based on aligned carbon nanofiber membrane

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Titel: Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
verfasst von: Zong-Wei Shang
Qian Xu
Guan-You He
Zhi-Wei Zheng
Chun-Hu Cheng
Publikationsdatum: 03.01.2021
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 10/2021
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-020-05708-x

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