Anzeige
Erschienen in:
01.08.2015
Effect of rapid thermal annealing on microstructure, electrical properties, and optical properties of Al-doped ZnO sol–gel deposited thin films
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 8/2015
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
Aluminum (Al)-doped ZnO thin films were prepared on glass substrates by sol–gel spin coating method. After the ZnO thin films were densified and crystallized by rapid thermal annealing (RTA), their microstructures, electrical properties and optical properties were studied. Following RTA treatment at various temperatures, the microstructure and surface morphology of the films were characterized by X-ray diffraction and scanning electron microscopy, respectively. Resistivity was measured at varying RTA temperatures by four-point probe technique. Diffusion of the Al reduced the resistivity of the ZnO:Al thin films to 3.15 × 10−3 Ω cm. Atomic force microscopy further showed that, after RTA treatment, Al diffusion into the ZnO films and grain growth roughened the surface of the films. The effects of temperatures of the RTA process on the structural, electrical, and optical characteristics of the ZnO:Al thin films are analyzed and discussed.