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Erschienen in:
01.10.2013
Effect of Sm2O3 dopant on microstructure and electrical properties of ZnO-based varistor ceramics
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2013
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Abstract
ZnO-based varistor ceramics doped with fixed Y2O3 and different Sm2O3 have been prepared by the conventional solid-state reaction route, and the phase composition, microstructure and electrical properties have been investigated by XRD, SEM and a V–I source/measure unit. The XRD analyses show the presence of primary phase ZnO and some minor secondary phases. Doping appropriate contents of Sm2O3 decrease the leakage current and enhance nonlinearity characteristics of ZnO-based varistor ceramics markedly. The varistor ceramics with 0.25 mol% Sm2O3 sintered at 1,125 °C for 1 h exhibit reasonable electrical properties with the breakdown field of 446.4 V/mm, the nonlinear coefficient of 65.8 and the leakage current of 2.36 μA/cm2. The results illustrate that doping Y2O3 and Sm2O3 may be a promising route for the production of ZnO-based varistor ceramics with good electrical properties.